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Immersion-type photoetching machine and flow field maintaining method

A lithography machine and immersion technology, which is applied in the field of semiconductor lithography equipment, can solve problems such as large humidity drop and measurement system interference, and achieve the effect of reducing liquid film evaporation cooling

Active Publication Date: 2014-12-24
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology

[0012] The invention provides an immersion lithography machine and its flow field maintenance method to solve the problem that the existing immersion lithography machine gas humidity drops too much and the sealing gas overflows and interferes with position measurement systems such as interferometers

Method used

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  • Immersion-type photoetching machine and flow field maintaining method
  • Immersion-type photoetching machine and flow field maintaining method
  • Immersion-type photoetching machine and flow field maintaining method

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Embodiment Construction

[0045] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0046] For the immersion lithography machine provided by the present invention, please refer to Figure 3 to Figure 6 , comprising a main frame 100, an illumination system 200 sequentially fixed on the main frame 100 from top to bottom, a projection objective lens 300, and a silicon wafer stage 400, on which silicon wafers coated with photosensitive photoresist are placed. piece 500, between the projection objective lens 300 and the silicon wafer 500 is filled with immersion liquid 600, between the proj...

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Abstract

The invention relates to an immersion-type photoetching machine and a flow field maintaining method. The immersion-type photoetching machine structurally comprises a main framework, and an illuminating system, a projection objective lens and a silicon chip platform, which are sequentially fixed on the main framework from top to bottom, wherein a silicon chip which is coated with photosensitive photoetching glue is arranged on the silicon chip platform, the space between the projection objective lens and the silicon chip is filled with immersion liquid, an immersion limiting mechanism is also arranged between the projection objective lens and the silicon chip, an immersion liquid supply opening, an extraction opening and an airtight gas inlet are formed in the immersion limiting mechanism, and the immersion liquid supply opening is used for replenishing the immersion liquid; the extraction opening is connected with a split negative pressure source which is used for providing extraction negative pressure for the immersion liquid; the airtight sealing gas inlet comprises a first airtight sealing gas inlet and a second airtight sealing gas inlet, and the first airtight sealing gas inlet and the second airtight sealing gas inlet are respectively connected to a split positive pressure source which is used for providing air supply positive pressure for the immersion liquid. The exposure defects can be reduced by virtue of the cooperation of the two airtight gas inlets.

Description

technical field [0001] The invention relates to the field of semiconductor photolithography equipment, in particular to an immersion photolithography machine and a flow field maintenance method thereof. Background technique [0002] Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose the pattern on the mask onto a substrate (such as a silicon wafer) coated with photoresist. Immersion lithography refers to filling water (or higher refraction immersion liquid) between the exposure lens and the silicon wafer to replace the corresponding air in the traditional dry lithography technology. Since the refractive index of water is larger than that of air, this makes The numerical aperture of the lens group is increased, and a smaller characteristic line width can be obtained. [0003] However, since immersion lithography needs to fill the liquid between the lens and the silicon wafer, this brings many new techni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 赵丹平张洪博聂宏飞罗晋张崇明
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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