Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing device. In a process of temperature control of a substrate using a heat transfer gas, the uniformity of processing within the plane of the substrate is maintained. The substrate processing method includes: the steps of adjusting the pressure P0 in the processing container to a vacuum state; and placing the processing container (1) in the state where the substrate S is separated from the upper surface of the mounting table (5) by using the lifting pin (85). A step of introducing a pressure-regulating gas to adjust the pressure P1 in the processing container (1) to a pressure P1 higher than the pressure P0; a step of lowering the lift pin (85) to place the substrate on the mounting table (5); from the processing container ( 1) A step of exhausting the pressure regulating gas; and a step of introducing a processing gas into the processing container while maintaining the pressure of the heat transfer space at P2, and processing the substrate S.

Description

technical field [0001] The present invention relates to a substrate processing method for performing predetermined processing on a substrate and a substrate processing apparatus using the processing method. Background technique [0002] In a manufacturing process of a flat panel display (FPD), a plasma etching process is performed on a substrate as an object to be processed. In the plasma etching process, for example, in a processing chamber in which a pair of parallel flat electrodes (upper electrode and lower electrode) are arranged, a substrate is placed on a stage functioning as a lower electrode, and a high-frequency power is applied to at least one of the electrodes to form a gap between the electrodes. form a high-frequency electric field. The plasma of the processing gas is formed by the high-frequency electric field, and the material film on the substrate is etched by the plasma. [0003] During the plasma etching process, a heat transfer gas such as He gas is sup...

AI Technical Summary

Problems solved by technology

However, when the substrate is large, it takes time to uniformly fill the backside of the substrate with heat transfer gas. Therefore, if the number of air holes for cooling the backside is reduced compared with the current situation, there is a problem that the throughput of the etching process will be greatly reduced. shortcoming

Therefore, when the number of pores is reduced, it becomes more difficult to control the uniform temperature in the surface of the substrate, which tends to become larger.

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