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A bidirectional esd protection device based on lateral pnp structure

A technology of ESD protection and devices, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of large current leakage, high breakdown voltage of ESD protection devices, etc., and achieve the effect of improving flexibility

Active Publication Date: 2017-09-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, the design of an ESD protection device needs to consider two aspects: one is that the ESD protection device must be able to discharge a large current; low voltage level
However, in some special circuits and special applications, ESD protection devices need to have a higher breakdown voltage and a stronger current discharge capability, and at the same time, it is necessary to improve the bidirectional ESD protection capability to the ground terminal

Method used

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  • A bidirectional esd protection device based on lateral pnp structure
  • A bidirectional esd protection device based on lateral pnp structure
  • A bidirectional esd protection device based on lateral pnp structure

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Embodiment Construction

[0023] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] A bidirectional ESD protection device based on a lateral PNP structure, comprising a P-type substrate 101, a first N-type well 102 is arranged in the P-type substrate, a second N-type well 103 is injected into the first N-type well 101 There is a first P+ implantation region 104, a second P+ implantation region 105, a first N+ implantation region 106, a second N+ implantation region 107, a third P+ implantation region 108, and a fourth P+ implantation region in the second N-type well 103. 109, wherein: the P-type substrate 101, the first N-type well 102 and the second N-type well 103 are all covered with an oxide isolation layer, and from left to right are the first oxide isolation layer 110, the second oxide isolation layer layer 111 , a third oxide isolation layer 112 , a fourth oxide isolation layer...

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Abstract

The invention discloses a bidirectional ESD protection device based on a lateral PNP structure, which can be used in an on-chip ICESD protection circuit. The protection device is mainly composed of a P-type substrate, a first N-type well, a second N-type well, a first P+ injection region, a second P+ injection region, a first N+ injection region, a second N+ injection region, and a third P+ injection region , the fourth P+ injection region and several field oxygen isolation regions; this type of protection device is under the action of positive or negative ESD pulses, the reverse PN junction of the internal lateral PNP structure is triggered to conduct, and at the same time the other N well The forward PN junction conduction will generate an ESD current discharge path composed of a lateral PNP transistor and a forward diode in series. By stretching the base widths of the two PNPs separately, the sustain voltage of the device when the positive or negative ESD pulse comes can be changed independently, and the flexibility of the device operation can be improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit electrostatic discharge (ESD-Electrostatic Discharge) protection, and relates to a bidirectional ESD protection device based on a lateral PNP structure. Background technique [0002] The phenomenon of electrostatic discharge (ESD) widely exists in nature, and it is also one of the important reasons for the failure of integrated circuit products. Integrated circuit products are easily affected by electrostatic discharge during their manufacturing and assembly processes, resulting in reduced reliability or even damage to the product. Therefore, research on electrostatic discharge protection devices and protection circuits with high reliability and strong electrostatic protection performance has a non-negligible role in improving the yield and reliability of integrated circuits. [0003] According to the causes of electrostatic discharge and the different ways of discharging integrated ci...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 纪长志刘志伟繆家斌刘聂张国彦刘毅杨雪娇田瑞刘凡
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA