Both-way ESD protection device based on transverse PNP structure

Abstract

The invention discloses a both-way ESD protection device based on a transverse PNP structure. The both-way ESD protection device based on the transverse PNP structure can be used in an on-chip ICESD protection circuit. The both-way ESD protection device is mainly formed by a P-type substrate, a first N-type trap, a second N-type trap, a first P+ injection region, a second P+ injection region, a first N+ injection region, a second N+ injection region, a third N+ injection region, a fourth N+ injection region and a plurality of field oxygen isolation regions. According to the both-way ESD protection device in the type, under the forward or backward ESD pulse effect, a backward PN junction of the internal transverse PNP structure is triggered for connection, connection is achieved through a forward PN junction in another N trap at the same time, and an ESD electric current releasing path formed by connecting a transverse PNP transistor with a forward diode in series will be generated. The maintaining voltage of the device when forward or backward ESD pulses come can be singly changed by respectively stretching the base width of two PNPs, and the working flexibility of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit electrostatic discharge (ESD-Electrostatic Discharge) protection, and relates to a bidirectional ESD protection device based on a lateral PNP structure. Background technique [0002] The phenomenon of electrostatic discharge (ESD) widely exists in nature, and it is also one of the important reasons for the failure of integrated circuit products. Integrated circuit products are easily affected by electrostatic discharge during their manufacturing and assembly processes, resulting in reduced reliability or even damage to the product. Therefore, research on electrostatic discharge protection devices and protection circuits with high reliability and strong electrostatic protection performance has a non-negligible role in improving the yield and reliability of integrated circuits. [0003] According to the causes of electrostatic discharge and the different ways of discharging integrated ci...

AI Technical Summary

Problems solved by technology

Generally, the design of an ESD protection device needs to consider two aspects: one is that the ESD protection device must be able to discharge a large current; low voltage level

However, in some special circuits and special applications, ESD protection devices need to have a higher breakdown voltage and a stronger current discharge capability, and at the same time, it is necessary to improve the bidirectional ESD protection capability to the ground terminal

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