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Method for manufacturing transparent conductive film, transparent conductive film, and electronic device

A technology of transparent conductive film and manufacturing method, which is applied in the direction of electric solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve the problems of high material cost, limited ITO resistance value, etc., and achieve excellent performance stability and sufficient conductivity Excellent light transmittance and water vapor barrier properties

Active Publication Date: 2014-12-24
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in such a transparent electrode, there are problems such as high material cost and the need for annealing treatment at about 300°C after film formation in order to reduce the resistance.
In addition, in order to expand the area of ​​the organic EL element, it is necessary to further reduce the resistance value of the transparent electrode, but ITO also has the problem that there is a limit to the reduction of the resistance value.

Method used

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  • Method for manufacturing transparent conductive film, transparent conductive film, and electronic device
  • Method for manufacturing transparent conductive film, transparent conductive film, and electronic device
  • Method for manufacturing transparent conductive film, transparent conductive film, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0032] 1. First Embodiment: First Configuration Example of Transparent Conductive Film

no. 2 Embodiment approach

[0033] 2. Second Embodiment: Second Configuration Example of Transparent Conductive Film

no. 3 Embodiment approach

[0034] 3. Third Embodiment: Configuration Example of Electronic Device

[0035] 4. Various embodiments

[0036]

[0037] [Overall configuration of transparent conductive film]

[0038] figure 1 A cross-sectional view of a schematic configuration of the transparent conductive film according to the first embodiment is shown in . In addition, "transparent" in this specification means that the light transmittance at a wavelength of 550 nm is 50% or more.

[0039] transparent conductive film 10, such as figure 1 As shown in , it includes: a substrate 11 , a modified compound layer 12 and a metal layer 13 . Furthermore, in the present embodiment, the modifying compound layer 12 and the metal layer 13 are sequentially laminated on one surface of the substrate 11 . be explained, figure 1 It is not shown in , but an anti-bleeding layer may be provided on the surface of the substrate 11 on the side of the modifying compound layer 12 . The anti-bleeding layer refers to a layer f...

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PUM

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Abstract

A method for manufacturing a transparent conductive film, said method comprising: forming a compound layer containing a silazane compound on a substrate; supplying energy to the compound layer and thus converting at least a part of the silazane compound into a compound having a siloxane bond to thereby modify the compound layer; and then forming a metal layer, that is configured from silver or an alloy comprising silver as the main component, on the unmodified compound layer or the modified compound layer.

Description

technical field [0001] The present invention relates to a method for producing a transparent conductive film, a transparent conductive film, and an electronic device including the same. Background technique [0002] In recent years, in various electronic devices such as liquid crystal display elements (LCD), solar cells (PV), organic electroluminescent elements (hereinafter referred to as organic EL elements), from the realization of improvement of safety and cost reduction Lightweight and flexible electronic devices are required from the viewpoint of expanding the scope of application and the like. In order to impart flexibility to these electronic devices, it is necessary to use a plastic base material instead of a conventionally used glass base material as a base material of the electronic device. Further, for example, when using an organic EL element as a light source for backlights of various displays, signboards, display panels such as emergency lights, and lighting, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00B32B7/02B32B15/04H01B5/14H01L51/50H05B33/04H05B33/26H05B33/28
CPCH01B1/02H01L31/1884Y02E10/549Y10T428/265Y10T428/31663Y02P70/50H10K71/60H10K85/633H10K85/324H10K85/342H10K77/10H10K85/6572H10K50/816H10K50/828H10K50/844H10K2102/3031H10K2102/311H10K85/40H10K2102/351
Inventor 竹村千代子
Owner KONICA MINOLTA INC
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