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LED substrate structure and manufacturing method of LED substrate structure

A technology of substrate structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output efficiency of LEDs, and achieve the effects of increasing light output efficiency, increasing axial luminous brightness, and improving luminous brightness

Active Publication Date: 2015-01-07
HANGZHOU SILAN AZURE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide an LED substrate structure and its manufacturing method to solve the problem of low light extraction efficiency of existing LEDs

Method used

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  • LED substrate structure and manufacturing method of LED substrate structure
  • LED substrate structure and manufacturing method of LED substrate structure
  • LED substrate structure and manufacturing method of LED substrate structure

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Embodiment 1

[0051] Specifically, please refer to Figure 2 to Figure 12 , which is a schematic diagram of a device structure formed in the method for manufacturing an LED substrate structure according to Embodiment 1 of the present invention.

[0052] Such as figure 2 As shown, a substrate 20 is provided, preferably, the substrate 20 is a sapphire substrate.

[0053] Next, if image 3 As shown, a silicon dioxide layer 21 is formed on the substrate 20 . In the embodiment of the present application, the thickness of the silicon dioxide layer 21 is 0.5 micrometers to 3 micrometers. Preferably, in forming the silicon dioxide layer 21 on the substrate 20, the deposition speed of the silicon dioxide layer 21 becomes slower and slower, and the process temperature becomes higher and higher. Preferably, the deposition rate of the silicon dioxide layer 21 is gradually decreasing from 100 angstrom / sec to 10 angstrom / sec, and the process temperature is gradually increasing from 200°C to 800°C. ...

Embodiment 2

[0071] Specifically, please refer to Figure 13 to Figure 20 , which is a schematic diagram of the device structure formed in the method for manufacturing the LED substrate structure according to the second embodiment of the present invention.

[0072] Such as Figure 13 As shown, a substrate 30 is provided, preferably, the substrate 30 is a sapphire substrate.

[0073] Next, if Figure 14 As shown, a silicon dioxide layer 31 is formed on the substrate 30 . In the embodiment of the present application, the thickness of the silicon dioxide layer 31 is 0.5 micrometers to 3 micrometers. Preferably, in forming the silicon dioxide layer 31 on the substrate 30, the deposition speed of the silicon dioxide layer 31 becomes slower and slower, and the process temperature becomes higher and higher. Preferably, the deposition rate of the silicon dioxide layer 31 is gradually decreasing from 100 angstrom / sec to 10 angstrom / sec, and the process temperature is gradually increasing from 2...

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Abstract

The invention provides an LED substrate structure and a manufacturing method of the LED substrate structure. Light transmission is increased through a transmission improving and reflection reducing structure, and therefore the luminous efficiency of LEDs can be improved. Further, the longitudinal section of the transmission improving and reflection reducing structure is designed to be in an inverted trapezoidal shape, so that the axial luminous brightness of the LEDs can be improved while the luminous brightness of the LEDs is improved. In addition, according to the graph complementary principle, the transmission improving and reflection reducing structure is manufactured on a flat substrate through conversional depositing, photoetching and etching devices, the process is simple, cost is low, and the LED substrate structure and the manufacturing method are suitable for large-scale commercial production.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic chip manufacturing, in particular to an LED substrate structure and a manufacturing method thereof. Background technique [0002] With the improvement of people's living standards, the enhancement of environmental awareness, the continuous improvement of the pursuit of home environment, leisure and comfort. Lamps and lighting are gradually shifting from simple lighting functions to the coexistence of decoration and lighting. It is inevitable that solid-state cold light source LEDs with dual advantages of lighting and decoration will replace traditional light sources and enter people's daily life. [0003] Since the commercialization of GaN-based LEDs in the early 1990s, after more than 20 years of development, its structure has become mature and perfect, and it has been able to meet people's current needs for lighting decoration; but it must completely replace traditional ligh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/00
CPCH01L33/46H01L2933/0025
Inventor 马新刚丁海生李芳芳李东昇江忠永
Owner HANGZHOU SILAN AZURE
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