Internal matching structure for controlling harmonic impedance for power transistor

Abstract

The invention discloses an internal matching structure for controlling harmonic impedance for a power transistor. The internal matching structure comprises a tube core and a matching circuit for connecting the tube core with an input pin or an output pin, wherein the matching circuit comprises at least one capacitor; and the capacitor which is directly connected with the input pin or the output pin through a bonding wire and an inductor which is connected with the input pin or the output pin and is constructed by a bonding wire at the other end perform resonance oscillation at a position where the working frequency of the transistor is increased twice. The inductor constructed by the bonding wire and the capacitor perform resonance oscillation at a position where the working frequency of the transistor is increased twice, thereby forming short circuit. The harmonic impedance shown by the tube core M1 does not change along with the change of an external matching circuit. The harmonic impedance can be regulated through selection of L4, so that the efficiency is increased. The harmonic impedance is purely inductive, and no power is consumed, so that the efficiency of the power transistor can be increased through adoption of the structure.

Description

technical field [0001] The invention relates to the field of power devices, in particular to an internal matching structure for controlling harmonic impedance of a power transistor. Background technique [0002] Power devices, mainly power devices based on RF LDMOS structure, usually include the following parts: power device die, usually RF LDMOS die, input internal matching capacitor, output internal matching capacitor, such as figure 1 and 2 As shown, L1, L2, L3 and L4 are bonding wire inductances, C1 and C2 are MOSCAP capacitors, M1 is a power device die, the input uses T-type matching, and the output uses L-type matching. [0003] In the design of the above-mentioned power amplifier transistors, it is assumed that the output capacitance of the power transistor is large, and all harmonic components are filtered out by the output capacitor, and the harmonic components are all zero. However, with the development of current process technology and the improvement of die des...

AI Technical Summary

Problems solved by technology

[0004]According to the design theory of power amplifiers, if only the fundamental wave component is used to make a Class-AB power amplifier, the efficiency at the saturation point is only 78%. The voltage and current of the fundamental wave have a relatively large superposition, and this superposition becomes the heat consumption of the transistor itself, which seriously reduces the efficiency of the power amplifier tube

Images