Method for manufacturing thin film transistor
A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of abnormal operation of thin film transistor and low yield of thin film transistor, so as to improve the residual film value is low, Improve the effect of defining anomalies and improving yield
Active Publication Date: 2015-01-21
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
A low residual film value will cause abnormal definition of the source and drain of the thin film transistor, and the abnormal definition of the source and drain will cause the thin film transistor to not work normally, resulting in a low yield of the thin film transistor
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[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0044] see figure 1 , which is a flowchart of a manufacturing method of a thin film transistor according to a preferred embodiment of the present invention. The manufacturing method of the thin film transistor (thin film transistor, TFT) 1 includes the following steps.
[0045] Step S101 , providing a substrate 100 . Please also refer to figure 2 , in this embodiment, the substrate 100 is a glass substrate. Understandably, in other implementation manners,...
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Abstract
The invention provides a method for manufacturing a thin film transistor, which comprises the steps of providing a substrate; forming a first metal layer at the middle part of a surface of the substrate, wherein the first metal layer is a grid of the thin film transistor; forming a grid insulating layer, a semiconductor layer and a second metal layer on the surface, where the first metal layer is formed, of the substrate and the first metal layer, wherein the grid insulating layer, the semiconductor layer and the second metal layer are arranged in a mode of being sequentially laminated; forming a light resistance layer on the second metal layer; patterning the light resistance layer so as to expose an edge portion of the second metal layer, wherein the patterned light resistance layer comprises a first portion and a second portion, the first portion is arranged in a mode of being laminated with the first metal layer through the grid insulating layer and the semiconductor layer, the height of the first portion is less than the height of the second portion, the second portion is arranged around the first portion, and the thickness of the first portion and the thickness of the second portion are in a range of 1000 angstroms to 10000 angstroms; and patterning the second metal layer and the semiconductor layer so as to define a source and a drain. The method provided by the invention can improve the manufacturing yield of the thin film transistor.
Description
technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a method for manufacturing thin film transistors with higher yield. Background technique [0002] A thin film transistor (thin film transistor, TFT), as a switching element, is widely used in electronic devices such as liquid crystal display devices. However, when manufacturing the source and drain of a thin film transistor, a metal layer is formed first, and then a photoresist layer is laid on the metal layer, and the photoresist layer is patterned so that the metal layer The source and drain are defined above. Usually, the surface of the photoresist layer away from the metal layer is a flat surface. When the photoresist layer is exposed, the photoresist layer left after exposure is relatively thin. That is, the residual film value of the photoresist layer after exposure is relatively low. A low residual film value will cause abnormal definition of the sour...
Claims
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IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66742H01L29/786
Inventor 陈仲仁潘龙
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD