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Light-emitting diode chip and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of falling off of P-type pads and N-type pads of light-emitting diode chips, and achieve the effects of improving service life and preventing falling off

Active Publication Date: 2015-02-04
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the P-type pad and N-type pad on the light-emitting diode chip fall off in the prior art, an embodiment of the present invention provides a light-emitting diode chip and a manufacturing method thereof

Method used

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  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof

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Embodiment 1

[0037] The embodiment of the present invention provides a light-emitting diode chip, which can be fabricated by the method provided in Embodiment 2, see figure 1 The LED chip includes a substrate 1 , an N-type layer 2 , a multi-quantum well layer 3 , a P-type layer 4 , a transparent conductive layer 5 , a P-type pad 6 , an N-type pad 7 , and a passivation layer 8 .

[0038] In this embodiment, the N-type layer 2, the multi-quantum well layer 3, and the P-type layer 4 are sequentially stacked on the substrate 1, and the light-emitting diode chip is provided with a groove extending from the P-type layer 4 to the N-type layer 2, A transparent conductive layer is stacked on the P-type layer 4 . The P-type layer 4 and the transparent conductive layer 5 are provided with a first annular groove extending from the transparent conductive layer 5 to the P-type layer 4, and a P-type pad 6 is arranged in the first annular groove, and the N-type pad 6 in the groove Layer 2 is provided wit...

Embodiment 2

[0059] The embodiment of the present invention provides a method for manufacturing a light-emitting diode chip, which can be used to make the light-emitting diode chip provided in Embodiment 1, see figure 2 , the production method includes:

[0060] Step 201: growing an N-type layer, a multi-quantum well layer, and a P-type layer sequentially on the substrate.

[0061] Figure 3a It is a schematic structural diagram of the LED chip obtained after step 201 is performed. Wherein, 1 represents a substrate, 2 represents an N-type layer, 3 represents a multi-quantum well layer, and 4 represents a P-type layer.

[0062] Specifically, this step 201 may include:

[0063] Using MOCVD (Metal Organic Chemical Vapor Deposition, Metal Organic Compound Chemical Vapor Deposition) equipment to sequentially grow N-type layer, multiple quantum well layer, and P-type layer on the substrate.

[0064] Specifically, the material and thickness of each layer of the light emitting diode chip may ...

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Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises a substrate, an N-type layer, a multi-quantum well layer, a P-type layer and a transparent conductive layer, wherein the N-type layer, the multi-quantum well layer, the P-type layer and the transparent conductive layer are sequentially stacked on the substrate. A groove extending from the P-type layer to the N-type layer is formed in the light-emitting diode chip, passivation layers are stacked on the transparent conductive layer and the N-type layer in the groove, a first annular groove extending from the transparent conductive layer to the P-type layer is formed in the P-type layer and the transparent conductive layer, a P-type bonding pad is arranged in the first annular groove, a second annular groove is formed in the N-type layer in the groove, an N-type bonding pad is arranged in the second annular groove, both the P-type bonding pad and the N-type bonding pad comprise a bottom layer and a top layer which are stacked on the bottom layer, the thickness of the bottom layer of the P-type bonding pad is smaller than the depth of the first annular groove, and the thickness of the bottom layer of the N-type bonding pad is smaller than the depth of the second annular groove. The light-emitting diode chip effectively prevents the P-type bonding pad and the N-type bonding pad from falling off.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] Light-emitting diode is a semiconductor solid-state light-emitting device, which can directly convert electrical energy into light energy. It has the advantages of energy saving and environmental protection, and is widely used in lighting, backlight, display, car lights and other fields. [0003] The light-emitting diode chip is the core component of the light-emitting diode, and the light-emitting diode can be obtained after the light-emitting diode chip is encapsulated by organic matter such as epoxy resin. The existing light-emitting diode chip includes a substrate, an N-type layer, a multi-quantum well layer, a P-type layer, and a transparent conductive layer stacked on the substrate in sequence, and a P-type pad arranged on the transparent conductive layer, which is arranged ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/62H01L33/00
CPCH01L33/005H01L33/22H01L33/62H01L2933/0008H01L2933/0066
Inventor 张建宝吴继清胡瑶
Owner HC SEMITEK CORP