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A method and device for adjusting threshold voltage of a memory chip, and a memory chip

A threshold voltage, memory chip technology, applied in the direction of information storage, static memory, read-only memory, etc., can solve the problems of bit error rate increase, drift, limit the service life of TLC, etc., and achieve the effect of prolonging the service life

Active Publication Date: 2017-08-29
LENOVO (BEIJING) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Through the research on the existing technology, the applicant found that after a TLC is programmed, data retention will occur as time goes by, that is, the stored charge will leak and cause voltage drift, which will lead to BER (Bit Error Rate, Bit Error Rate) )rise
This feature has become an important reason that affects the life of TLC. For example, the nominal P / Ecycle of TLC is 500 times of erasing and writing. If it is less than this threshold, the BER caused by data retention after one year of storage can be lower than that of ECC (Error Correction Code, error correction code) within the verification range, and greater than this threshold will exceed the ECC verification range, thus limiting the service life of TLC

Method used

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  • A method and device for adjusting threshold voltage of a memory chip, and a memory chip
  • A method and device for adjusting threshold voltage of a memory chip, and a memory chip
  • A method and device for adjusting threshold voltage of a memory chip, and a memory chip

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Effect test

Embodiment 1

[0070] figure 1 It is a schematic flowchart of a method for adjusting the threshold voltage of a memory chip provided by the embodiment of the present application.

[0071] Such as figure 1 As shown, the method may include the following steps:

[0072] S101: Detect a bit error rate in the first storage block.

[0073] S102: Calculate the data retention time of the first storage block according to the bit error rate.

[0074] S103: Determine whether the erasing and writing times of the second storage block are equal to a preset erasing and writing times.

[0075] When the judgment result is yes, go to S104.

[0076] S104: Look up a threshold voltage value corresponding to the data retention time in a preset relationship table between data retention time and threshold voltage value.

[0077] S105: Adjust the threshold voltage when the second storage block reads data according to the found threshold voltage value.

[0078] It can be seen from the above scheme that the memor...

Embodiment 2

[0080] figure 2 It is a schematic flowchart of another method for adjusting the threshold voltage of a memory chip provided by the embodiment of the present application.

[0081] Such as figure 2 As shown, the method may include the following steps:

[0082] S201: Detect a bit error rate in the first storage block.

[0083] In the previous embodiment, it has been described that the first storage block is in a read-only mode, and the data therein is the data stored during initialization.

[0084] Therefore, when the memory chip is turned on, it first reads the stored data in the first storage block, and compares the read data with the data initially stored in the first storage block to detect errors in the first storage block. code rate.

[0085] S202: Determine whether the bit error rate is less than or equal to a preset threshold.

[0086] Here, for the storage block, the data is considered unrecognizable if it exceeds its maximum bit error rate, but in practical appli...

Embodiment 3

[0099] image 3 It is a schematic flowchart of another method for adjusting the threshold voltage of a memory chip provided by the embodiment of the present application.

[0100] Such as image 3 As shown, the method may include the following steps:

[0101] S301: Detect a bit error rate in the first storage block.

[0102] In the previous embodiment, it has been described that the first storage block is in a read-only mode, and the data therein is the data stored during initialization.

[0103] Therefore, when the memory chip is turned on, it first reads the stored data in the first storage block, and compares the read data with the data initially stored in the first storage block to detect errors in the first storage block. code rate.

[0104] S302: Determine whether the bit error rate is greater than or equal to a maximum bit error rate.

[0105] Here, for the storage block, the data is considered unrecognizable if it exceeds its maximum bit error rate, but in practica...

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PUM

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Abstract

The invention discloses threshold voltage regulating method and device for a memory chip and the memory chip. The device is characterized in that a first memory block and a second memory block which are independent from each other are arranged in the memory chip, wherein the first memory block is in a read-only mode, and the second memory block is used for storing user data. The method comprises the following steps: detecting bit error rate in the first memory block; calculating the data retention time of the first memory block according to the bit error rate; determining whether the erasing times of the second memory block are equal to the pre-erasing times; if so, finding out the threshold voltage value corresponding to the data retention time from a preset data retention time and threshold voltage value relation table; regulating the threshold voltage of the second memory block under data reading according to the found threshold voltage value. With the adoption of the method, a user can read data meeting the error correcting code (ECC) requirement from the memory chip once the standard erasing times are exceeded, and therefore, the service life of the memory chip is prolonged.

Description

technical field [0001] The present application relates to the technical field of data storage, in particular to a storage chip threshold voltage adjustment method, device and storage chip. Background technique [0002] TLC (Triple-Level Cell, third-level storage unit) can store 3 information bits in each storage unit, and because of its larger storage capacity, the cost is much lower, and it is widely used in low-level NAND Flash related products, such as It is a low-speed flash memory card, a small memory card microSD or a flash drive, etc. [0003] Through the research on the existing technology, the applicant found that after a TLC is programmed, data retention will occur as time goes by, that is, the stored charge will leak and cause voltage drift, which will lead to BER (Bit Error Rate, Bit Error Rate) )rise. This feature has become an important reason that affects the life of TLC. For example, the nominal P / Ecycle of TLC is 500 times of erasing and writing. If it is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/00G11C16/06
Inventor 高长磊杨碧波管慧娟
Owner LENOVO (BEIJING) LTD