Power control device and preparation method thereof

Abstract

The invention relates to a power control device for high-end and low-end MOSFET (metal oxide semiconductor field effect transistor) IC (integrated control). The power control device comprises a chip mounting unit, a control chip, a first chip and a second chip, wherein the chip mounting unit comprises a base, a first pin, a second pin, a first row of bearing pins and a second row of bearing pins, the first pin, the second pin, the first row of bearing pins and the second row of bearing pins are arranged near the base, the first chip and the second chip are respectively arranged on the base, the control chip is arranged on the first row of bearing pins and the second row of bearing pins, a main electrode at the front surface of the first chip is electrically connected to the first pin by a first metal sheet, and a main electrode at the front surface of the second chip is electrically connected to the second pin by a second metal sheet.

Description

technical field [0001] The invention generally relates to a power management device, in particular to a power control device of high-end and low-end MOSFET integrated control ICs and a preparation method thereof. Background technique [0002] In power control devices such as DC-DC, the power consumption of the chip in the working state is relatively large, and the source terminal or drain terminal of the chip is often required to have a good heat dissipation effect, so that part of the lead frame is exposed to the plastic package. outside. For example in figure 1 A DC-DC converter 10 including a high-end MOSFET 11 and a low-end MOSFET 13 is shown. The converter 10 also includes a control chip 12, and the control chip 12 outputs PWM or PFM signals to MOSFETs 11 and 13 and receives their feedback signals. Therefore, some electrode pads of the MOSFETs 11 and 13 are electrically connected to the I / O pads of the control chip 12 through a plurality of bonding wires. Wherein, MO...

AI Technical Summary

Problems solved by technology

More obviously, the bases 21, 22, and 23 occupy a large area, which not only leads to high cost but also suppresses the mainstream market demand for light and small devices.

In addition, U.S. patent application US2012061813A1 also discloses a DC-DC converter. The side-by-side high-side and low-side MOSFETs are located on the base, and the control device is completely superimposed on the high-side and low-side MOSFETs, which requires the lower The leads of the MOSFET must have a low line arc height value, otherwise the control chip is easy to touch the metal leads below it, and another bad consequence is that the heat dissipation paths of the high-end and low-end MOSFETs on the upper side of each are completely cut off by the control chip

Images