Semiconductor interconnection structure, semiconductor device comprising same, and preparation methods thereof

An interconnection structure and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as cracks and affecting the stability of the electrical connection of semiconductor devices

Active Publication Date: 2015-02-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the extremely hard inner metal layer 10' is prone to cracks under the external impac

Method used

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  • Semiconductor interconnection structure, semiconductor device comprising same, and preparation methods thereof
  • Semiconductor interconnection structure, semiconductor device comprising same, and preparation methods thereof
  • Semiconductor interconnection structure, semiconductor device comprising same, and preparation methods thereof

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[0031] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0032] It should be noted that the terms used here are only used to describe specific embodiments, and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0033] For ease of description, spatially relative terms, such as "on," "over," "above," etc.,...

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Abstract

The invention provides a semiconductor interconnection structure, a semiconductor device comprising the same, and preparation methods thereof. The semiconductor interconnection structure comprises an inner metal layer arranged on the semiconductor device; an electric dielectric layer arranged on the inner metal layer, the electric dielectric layer being provided with a through hole exposing the inner metal layer; a buffer portion arranged in the through hole; and a conductive portion filling the through hole internally provided with the buffer portion. According to the invention, the electric dielectric layer and the buffer layer are arranged, and at the same time, support is provided for the conductive portion made of a quite soft material, such that the impact force applied by an external connection copper material to the conductive portion during a bonding connection process is alleviated, the damage caused by the impact force to the inner metal layer is reduced, the inner metal layer is prevented from cracks and damage, the electrical connection stability of the semiconductor interconnection structure is improved, and the service life of the semiconductor device applying the semiconductor interconnection structure is prolonged.

Description

technical field [0001] The present application relates to the field of IC chip integrated circuit technology, and more specifically, to a semiconductor interconnection structure, semiconductor devices including the same, and their preparation methods. Background technique [0002] A semiconductor interconnect structure is a common structure included in a semiconductor device. The traditional semiconductor process mainly uses aluminum as the semiconductor interconnection material, which has been limited in signal delay. Especially on the technology node of 90nm or below, the main signal delay comes from the part of the semiconductor interconnection structure. In order to solve this problem, the researchers proposed to integrate the copper process into the manufacturing process of the semiconductor device, and make the copper material into the inner metal plate interconnected with the metal in the semiconductor device. [0003] Such as figure 1 As shown in the semiconductor...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L21/768
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP
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