Metal-oxide-semiconductor (MOS) device and manufacturing method thereof
A technology of MOS devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor Guardband isolation effect, and achieve the effect of improving isolation effect.
Active Publication Date: 2015-02-11
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
[0005] The invention provides a metal-oxide-semiconductor MOS device and its manufacturing method, which are used to solve the technical problem of poor Guard band isolation effect in the prior art when manufacturing MOS devices
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Embodiment Construction
[0021] The invention provides a structure of a metal-oxide-semiconductor MOS device. The MOS device structure specifically includes: a substrate, a source electrode, a drain electrode, a pillar, a first insulating medium layer and a gate conductive layer.
[0022] The MOS device is structured as follows.
[0023] A source and a drain in the form of a column are provided on the substrate; one end of the column of the source and drain in the form of a column is close to or flush with the surface of the substrate, and the other end of the column extends to the inside of the substrate; The cross-section of the cylinder can be rectangular, circular and other shapes;
[0024] On the substrate, a cylinder with a ring-shaped cross-section is provided outside the area where the source and drain electrodes are located. The inside of the substrate, and the column with a circular cross-section is not in contact with the above-mentioned source and drain, that is, there is a certain distan...
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The invention provides a metal-oxide-semiconductor (MOS) device and a manufacturing method thereof. The device includes: a substrate on which cylindrical source electrode and drain electrode are arranged; an annular cylinder is arranged and surrounds the exteriors of the source electrode and the drain electrode, and the cylinder whose section is annular is not in contact with the source electrode and the drain electrode; the conductivity type of the cylinder whose section is annular is opposite to the conductivity of the source electrode and the drain electrode; a first insulating medium layer is arranged on the surface of the substrate in a middle area between the drain electrode and the drain electrode; and a gate conducting layer is arranged on the surface of the first insulating medium layer. The MOS device provided by the embodiment of the invention effectively solves the technical problem of poor Guard band isolation effect of MOS devices in the prior art.
Description
technical field [0001] The invention relates to the field of semiconductor device preparation, in particular to a metal-oxide-semiconductor MOS device and a manufacturing method thereof. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits. According to the polarity of its "channel", MOSFET can be divided into n-type and p-type MOSFET, referred to as NMOS and PMOS. [0003] In the prior art, in order to ensure that NMOS and PMOS work independently, a guard band (Guard band) is usually used for isolation during device preparation, that is, a rectangular ring is formed around the source and drain regions of the device, and the size is just enough to separate the source and drain regions. surrounded. Since the Guard band is doped with impurities of the opposite conductivity type to the source and drain regions, it forms a P...
Claims
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IPC IPC(8): H01L29/78H01L29/08H01L21/336
CPCH01L29/0688H01L29/0847H01L29/66477H01L29/78
Inventor 宋秀海
Owner FOUNDER MICROELECTRONICS INT