Scanning driving circuit used for oxide semiconductor thin film transistor

Abstract

The invention provides a scanning driving circuit used for an oxide semiconductor thin film transistor. A pull-down maintaining circuit part (600) of the scanning driving circuit is provided with main inverters and auxiliary inverters which lead in constant-voltage low potential (DCL); and the constant-voltage low potential (DCL) is set to be smaller than second negative potential (VSS2), and the second negative potential (VSS2) is set to be smaller than first negative potential (VSS1). With the scanning driving circuit used for the oxide semiconductor thin film transistor adopted, the electrical properties of the oxide semiconductor thin film transistor will not affect the scanning driving circuit, in particular, poor functional performance caused by electric leakage can be avoided, and the pull-down maintaining circuit part (600) can be normally pulled down in an effect period, and is in high potential in a non-effect period, and a first node (Q (N)) and an output end (G (N)) can be maintained in low potential.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a scanning driving circuit for an oxide semiconductor thin film transistor. Background technique [0002] GOA (Gate Drive On Array), is to use thin film transistor (thin film transistor, TFT) liquid crystal display array (Array) manufacturing process to make the gate driver on the thin film transistor array substrate, so as to realize the driving method of progressive scanning. [0003] Usually, the GOA circuit is mainly composed of a pull-up part, a pull-up control part, a transfer part, a pull-down part, and a pull-down maintenance circuit part ( Pull-down Holding part) and the rising part (Boost part) which is responsible for raising the potential. The rising part is generally composed of a bootstrap capacitor. [0004] The pull-up part is mainly responsible for outputting the input clock signal (Clock) to the gate of the thin film transistor as a driving signal of the l...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a scanning drive circuit for oxide semiconductor thin film transistors, to solve the impact of oxide thin film transistors on the GOA drive circuit, especially the poor functionality caused by leakage problems, and to solve the problem of current oxide semiconductors. The problem that the pull-down maintenance circuit part of the thin-film transistor scan driving circuit cannot be at a higher potential during the non-active period

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