Organic film transistor and manufacturing method thereof

A technology of organic thin film and transistor, which is applied in the field of organic thin film transistor and its preparation, and transistor preparation, and can solve problems such as high environmental requirements, high cost, and complicated manufacturing process.

Inactive Publication Date: 2015-03-11
NANJING UNIV OF POSTS & TELECOMM
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, traditional field effect transistors are mainly inorganic semiconductor materials such as silicon and germanium, but their size is approaching the natural limit of miniaturization, which cannot meet the further improvement of feature size and integration. At the same time, it is generally prepared by photolithography and semiconductor technology. The production process is complicated, the cost is expensive, and the environmental requirements are high, which is not conducive to large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic film transistor and manufacturing method thereof
  • Organic film transistor and manufacturing method thereof
  • Organic film transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] A method for preparing an organic thin film transistor, specifically comprising the following steps:

[0032] Step 1: select heavily doped silicon as the substrate, heavily doped silicon as the gate electrode, and thermally oxidized silicon dioxide as the insulating layer;

[0033] Step 2, preparing an octadecyltrichlorosilane OTS modification layer on the insulating layer by vaporization;

[0034] Step 3, spin-coating a polystyrene PS modification layer on the octadecyltrichlorosilane OTS modification layer;

[0035] Step 4, preparing source and drain electrodes on the polystyrene PS modification layer by mask evaporation;

[0036] In step five, an organic semiconductor active layer is prepared on the electrode by inkjet printing.

[0037] Choose heavily doped silicon as the substrate, heavily doped silicon as the gate electrode, and thermally oxidized silicon dioxide as the insulating layer;

[0038] The insulating layer is modified by vaporization on the insulatin...

Embodiment 1

[0044] 300 nm SiO was chosen to be thermally grown on the surface 2 The heavily doped silicon wafer is used as the substrate 1, the heavily doped silicon is used as the gate layer, and the thermally oxidized SiO 2 As an insulating layer, ultrasonically in acetone, ethanol, and deionized water for 5 minutes, then rinse with deionized water, then dry with nitrogen, place in an oven at 60°C, bake for 10 minutes, and treat with ultraviolet ozone for 10 minutes;

[0045] Use a capillary to draw a little octadecyltrichlorosilane OTS and drop it in a petri dish. Dissolve octadecyltrichlorosilane OTS in toluene at a concentration of 3 mg / ml, and place the treated silicon chip in a petri dish , placed in a vacuum drying oven, heated to 140°C, and left for 1 hour to form a 1nm-thick octadecyltrichlorosilane OTS modified layer 2;

[0046] Spin-coat polystyrene PS, polystyrene PS is dissolved in chlorobenzene, the concentration is 16mg / ml, the rotation speed is 3000RPM, the time is 30S, ...

Embodiment 2

[0051] 300 nm SiO was chosen to be thermally grown on the surface 2 The heavily doped silicon wafer is used as the substrate 1, the heavily doped silicon is used as the gate layer, and the thermally oxidized SiO 2 As an insulating layer, ultrasonically in acetone, ethanol, and deionized water for 5 minutes, then rinse with deionized water, then dry with nitrogen, place in an oven at 60°C, bake for 10 minutes, and treat with ultraviolet ozone for 10 minutes;

[0052] Use a capillary to draw a little octadecyltrichlorosilane OTS and drop it in a petri dish. Dissolve octadecyltrichlorosilane OTS in toluene at a concentration of 3 mg / ml, and place the treated silicon chip in a petri dish , placed in a vacuum drying oven, heated to 140°C, and left for 1 hour to form a 1nm-thick octadecyltrichlorosilane OTS modified layer 2;

[0053] Spin-coat polystyrene PS, polystyrene PS is dissolved in chlorobenzene, the concentration is 17mg / ml, the rotation speed is 3000RPM, the time is 35S, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an organic film transistor and a manufacturing method thereof. The organic film transistor comprises a heavily-doped silicon chip, a modification layer Octadecyltrichlorosilane OTS, a modification layer polystyrene PS, a source and drain electrode layer and a P3HT organic semiconductor active layer, wherein the modification layers are arranged between an insulation layer and an electrode layer, the modification layers comprise the Octadecyltrichlorosilane OTS layer and the polystyrene PS layer. According to the method, step 1, the heavily-doped silicon chip is selected as a substrate, heavily-doped silicon is taken as a gate electrode, and silicon dioxide generated through thermal oxidization is taken as the insulation layer; step 2, the Octadecyltrichlorosilane OTS modification layer is prepared on the insulation layer through a vaporization mode; step 3, the polystyrene PS modification layer is coated on the Octadecyltrichlorosilane OTS modification layer; step 4, and the source and drain electrodes are prepared on the polystyrene PS modification layer through a mask evaporation mode; and step 5, the organic semiconductor active layer is prepared on the electrodes through an ink-jet printing method.

Description

technical field [0001] The invention relates to a transistor, in particular to an organic thin film transistor and a preparation method thereof, belonging to the field of transistor preparation. Background technique [0002] A field-effect transistor is a voltage-controlled device, that is, an active electronic device that can control the ability of a solid material to conduct electricity by changing an electric field. This device has a series of advantages: small size, light weight, low noise, relatively good thermal stability, relatively strong radiation resistance, relatively mature manufacturing process, etc., so it is widely used in various circuits. It can be said that the core basic device that constitutes a modern integrated circuit is a field effect transistor. [0003] At present, traditional field effect transistors are mainly inorganic semiconductor materials such as silicon and germanium, but their size is approaching the natural limit of miniaturization, which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/30H01L51/40
CPCH10K10/46
Inventor葛·瑞金宋怡静杨昕黄维侯晓纯
OwnerNANJING UNIV OF POSTS & TELECOMM