Method for measuring resistivity of metal film

Abstract

The invention provides a method for measuring resistivity of a metal film. The measuring method comprises the following steps: providing a semiconductor substrate on the surface of which the metal film is formed, and making an organic protection film; providing a measurement platform, wherein a probe on the measurement platform moves toward the organic protection film at a first speed; allowing the probe to move in the organic protection film at a second speed after the probe is in contact with the organic protection film, and the second speed is smaller than the first speed; stopping movement of the probe when the probe moves to the surface of the metal film, reading a voltage value and a current value, and calculating the resistivity of the metal film. According to the method, a layer of organic protection film is made on the surface of the metal film, the probe rapidly descends to the surface of the organic protection film at the first speed, pricks the organic protection film at the second speed and slowly descends to the surface of the metal film, and two different probe speeds are adopted, so that the probability of pricking of the metal film is lowered greatly, the success rate of a product test is increased, and the measurement period is shortened.

Description

technical field [0001] The invention relates to the field of semiconductor testing, in particular to a method for measuring the resistivity of a metal thin film. Background technique [0002] Thin film materials are the basic materials of microelectronics technology. In general, films are artificially fabricated with a thickness of 1 μm (10 -6 m) The following solid films and thin films are prepared on a substrate, such as glass, semiconductor silicon, etc. Since the thickness of the film (referred to as the film thickness) is very thin, the film thickness greatly affects the physical properties of the film material such as electrical properties, optical properties, magnetic properties, mechanical properties, and ferroelectric properties. The phenomenon that the physical properties of thin film materials are affected by film thickness is called size effect. The size effect determines that some physical and chemical properties of thin film materials are different from thos...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for measuring the resistivity of a metal film, which is used to solve the problem in the prior art that the metal film is easily punctured by a probe and the resistivity of the metal film cannot be measured. question

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