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Vertical transistor unit and manufacturing method thereof

A manufacturing method and transistor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of low component yield and reduced gate layer thickness of field effect transistors, etc.

Inactive Publication Date: 2015-03-25
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, as the critical dimension decreases, the thickness of the gate layer of the field effect transistor also decreases, which is easy to cause the problem of low component yield due to the short channel effect

Method used

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  • Vertical transistor unit and manufacturing method thereof
  • Vertical transistor unit and manufacturing method thereof
  • Vertical transistor unit and manufacturing method thereof

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Embodiment Construction

[0042] The present invention provides a vertical transistor element, which can prevent the problem of short-channel effect easily caused by the reduction of critical dimensions of the transistor element. In order to make the above and other objects, features and advantages of the present invention more comprehensible, several vertical transistor devices and their manufacturing methods are specifically cited below as preferred embodiments, together with the accompanying drawings, and described in detail as follows.

[0043] Please refer to Figures 1A to 1F , Figures 1A to 1F It is a schematic cross-sectional view of a manufacturing process structure for manufacturing a vertical transistor device 100 according to an embodiment of the present invention. Wherein the method for making field effect transistor element 100 comprises the following steps:

[0044] First, a substrate 101 is provided. In some embodiments of the present invention, the substrate 101 is a silicon substrat...

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Abstract

The invention discloses a vertical transistor unit and a manufacturing method of the vertical transistor unit. The vertical transistor unit comprises a base material, a first source electrode, a drain electrode, a first gate dielectric layer, a first gate electrode and a first doping region. The base material is provided with at least one protruding portion. The first source electrode has first electrical property and is formed on the base material. The drain electrode has first electrical property and is located above the protruding portion. The first gate electrode is adjacently connected with the first side wall of the protruding portion. The first gate dielectric layer is located between the first side wall and the first gate electrode and is adjacently connected with the first source electrode and the drain electrode, and the first doping region has second electrical property and is formed under the protruding portion and adjacently connected with the first source electrode.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a vertical transistor (vertical transistor) element and its manufacturing method. Background technique [0002] A vertical transistor device includes source, gate and drain structures vertically stacked on a substrate. Among them, the gate is located between the upper and lower source and drain electrodes, making the channel perpendicular to the substrate level. Since the channel length depends on the thickness of the deposited gate material, the lateral unit area of ​​the transistor can be greatly reduced and the integration of semiconductor elements can be increased. [0003] However, as the critical dimension decreases, the thickness of the gate layer of the field effect transistor also decreases, which is likely to cause the problem of low component yield due to the short channel effect. [0004] Therefore, there is a need to provide an adv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7827H01L29/0603H01L29/66666
Inventor 苏浩胡航廖鸿
Owner UNITED MICROELECTRONICS CORP