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Static random access memory

A static random access and memory technology, applied in semiconductor/solid-state device components, electric solid-state devices, semiconductor devices, etc., can solve the problem of difficult exposure patterns of SRAM components

Active Publication Date: 2017-01-04
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, with the reduction of manufacturing process line width and exposure pitch, it is difficult to use the existing structure to expose the desired pattern in the manufacture of SRAM components.

Method used

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Embodiment Construction

[0058] In order to enable those who are familiar with the technical field of the present invention to further understand the present invention, the preferred embodiments of the present invention are specifically listed below, and with the accompanying drawings, the composition of the present invention and the desired effects are described in detail. .

[0059] For the convenience of description, the drawings of the present invention are only schematic diagrams for easier understanding of the present invention, and the detailed proportions thereof can be adjusted according to design requirements. Those skilled in the art should be able to understand the upper and lower relationships of relative elements in the figures described in the text to refer to the relative positions of objects, so they can be turned over to present the same components, which should all be disclosed in this specification The range is described here.

[0060] Please refer to figure 1 and figure 2 , f...

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Abstract

The invention discloses a static random access memory, which comprises a plurality of static random access memory units arranged on a substrate, wherein each static random access memory unit comprises at least one grid structure arranged on the substrate, a plurality of fin structures located on the substrate, a first interlayer dielectric layer surrounding the grid structure, a first contact plug arranged in the first interlayer dielectric layer, and a second interlayer dielectric layer arranged on the first interlayer dielectric layer, wherein the arrangement directions of the fin structures are vertical to those of the grid structures; and each first contact plug is in a long strip form and is in contact with two corresponding fin structures at the same time.

Description

technical field [0001] The present invention relates to a static random access memory (static random access memory, SRAM), in particular to a SRAM with two interlayer dielectric layers and contact plugs disposed in the two interlayer dielectric layers. Background technique [0002] An embedded static random access memory (embedded static random access memory, embedded SRAM) includes a logic circuit and the static random access memory connected to the logic circuit. The SRAM itself is a volatile memory cell, that is, when the power supplied to the SRAM disappears, the stored data will be erased at the same time. Static random access memory stores data by using the conductive state of the transistor in the storage unit. The design of static random access memory is based on mutual coupling transistors. There is no problem of capacitor discharge, and it does not need to be continuously charged to keep data. Loss, that is, the action of not needing to update the memory, is diffe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11H01L23/528
CPCH10B10/12H01L27/0886H01L27/0207H01L27/0924
Inventor 黄俊宪郭有策王淑如洪裕祥傅思逸许智凯郑志祥
Owner UNITED MICROELECTRONICS CORP
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