The invention discloses a method for manufacturing a
semiconductor device patterned structure. The method includes the steps of firstly, sequentially forming a target layer, a first
mask layer and a first patterned
mask layer on a substrate, then using the first patterned
mask layer as an
etching mask, forming a plurality of feature structures on the substrate, wherein each
feature structure comprises a first patterned
mask layer and a patterned target layer, forming a second patterned mask on the substrate so as to cover a part of the feature structures and
expose a preset region, carrying out a second
etching manufacturing process, completely eliminating the
feather structures in the preset region and the position, in the preset region, of the second patterned mask, finally, carrying out a third
etching manufacturing process, using the first pattering mask
layers as etching masks, and completely eliminating the positions, which are not covered by the first patterned mask
layers, of the target layer.