46results about How to "Improve production process yield" patented technology

A layout pattern of a static random access memory is disclosed and at least includes a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first access transistor and a second access transistor on a substrate; a plurality of fin structures disposed on the substrate and including at least one first fin structure and at least one second fin structure; a J-shaped gate structure including a long part, a short part and a bridge part connecting the long part and the short part; and at least one first extending contact structure crosses over the at least one first fin structure and the at least one second fin structure, wherein the at least one first extending contact structure does not overlap with the bridge part.

The invention discloses a display module and a method for manufacturing the same. The display module comprises a transparent cover plate, a first protective film and an organic light emitting display element. The organic light emitting display element is configured between the transparent cover plate and the first protective film. The area of the organic light emitting display element is smaller than that of the transparent cover plate and that of the first protective film.

The invention discloses a semiconductor component and a manufacturing method thereof. The semiconductor component comprises a substrate which defines at least one storage area, a mesh type isolation structure formed on the substrate and storage electrode contact plugs. Multiple storage units are arranged in the storage area. The mesh type isolation structure comprises multiple basically homogeneous dielectric sidewalls and first openings defined by the dielectric sidewalls. The storage electrode contact plugs are arranged in the first openings and electrically connected with the storage unitsrespectively.

The invention discloses an air exhaustion ink penetration plug method of circuit board, and a relative device, wherein the upper and lower sides of a circuit board are respectively provided with a network plate and an air absorber, the network plate is provided with a stuff inlet relative to a conductive hole of the circuit board, and the invention uses network plate print method to stuff ink into the conductive hole, and engaged with the exhaustion of an exhauster to fill ink completely into the conductive hole, therefore, the conductive hole with high length / width ratio can avoid foam, concave or break, to improve quality.

A light-emitting device including a substrate, an insulating layer, an inner circuit structure, a plurality of light-emitting elements, an insulating encapsulation layer, and a transparent conductive layer is provided. The insulating layer is disposed on the substrate. The inner circuit structure is disposed on the insulating layer. The light-emitting elements are correspondingly disposed on the inner circuit structure. The insulating encapsulation layer is disposed on the inner circuit structure. The insulating encapsulating layer covers a portion of the inner circuit structure and encapsulates the light-emitting elements. The transparent conductive layer is disposed on the insulating encapsulating layer. The transparent conductive layer electrically connects the light-emitting elements, and serially connects the light-emitting elements.

The invention discloses a clean production process of m-carbamidoaniline hydrochloride. The clean production process comprises the following steps of: dissolving m-phenylenediamine into a sodium chloride salt water reaction system; adding an auxiliary agent into the reaction system; controlling a reaction temperature at -5 DEG C to 25 DEG C; then adding sodium cyanate and hydrochloric acid for reaction; and after the reaction is completed, carrying out post-treatment on a resulting substance to obtain m-carbamidoaniline hydrochloride, wherein the auxiliary agent is nitric acid or nitrate. According to the clean production process, salt water, instead of pure water, is used as base water, m-carbamidoaniline hydrochloride produced in the reaction can be separated out in time by using salt precipitation effects of sodium chloride, a byproduct diurea is not generated, the purity of the obtained m-carbamidoaniline hydrochloride is more than 98%, the yield is more than 95%, the content is 75%-80%, the sewage quantity is reduced by 50%, and the process is simple and high in automation degree.

The invention provides a fingerprint sensing module. The fingerprint sensing module comprises a first substrate, an active element, a photosensitive element layer, a collimation structure layer, a second substrate, a plurality of micro lenses and a gap pattern, the active element is disposed on the first substrate. The photosensitive element layer is arranged on the first substrate and is electrically connected with the active element. The collimation structure layer is arranged on the photosensitive element layer. The second substrate is arranged on the collimation structure layer. The plurality of micro lenses are arranged on the surface of the side, away from the photosensitive element layer, of the collimation structure layer and are overlapped on the photosensitive element layer. The micro-lens areas are divided into a plurality of micro-lens groups, and the micro-lens groups are respectively located in a plurality of sensing pixel areas of the fingerprint sensing module. The gap pattern extends between the microlens groups. According to the fingerprint sensing module provided by the invention, the external force tolerance and the manufacturing process margin of the fingerprint sensing module can be increased, so that the manufacturing process yield and the reliability of the fingerprint sensing module are improved.

The present invention provides a display panel and an electronic device containing it, wherein the display panel includes a plurality of sub-pixels and a plurality of pixel units, and the plurality of sub-pixels include at least a first color sub-pixel and at least a second color sub-pixel; the plurality of sub-pixels and Multiple pixel units are set in one-to-one correspondence. The display panel provided by this application can greatly reduce the difficulty of its manufacturing process while ensuring a high aperture ratio, thereby improving the yield rate of the manufacturing process of the display panel, significantly reducing the manufacturing cost of the display panel, and greatly improving the performance of the display panel. Display performance and provide a comfortable user experience.

When a defective pixel causing light leakage is detected in a flat display panel, an optical modulation region is formed in a substrate by emitting a laser beam such that a virtual image is displayed at a position corresponding to the defective pixel. Accordingly, quality of the flat display panel may be improved thereby increasing manufacturing process yield.

The invention relates to an electrophoretic display and a manufacturing method thereof. The electrophoretic display comprises a first base plate, an active component array, a driving circuit, a flexible printed circuit, an electrophoretic display layer, a second base plate and a driving chip. The first base plate is provided with a first surface which is provided with a display region and a line region. The active component array is arranged in the display region, the driving circuit is arranged in the line region and is electrically connected to the active component array, and an electric conduction flexible circuit is partially arranged on the first base plate and is electrically connected to the driving circuit. The electrophoretic display layer and the second base plate are arranged on the active component array and the driving circuit sequentially, and the sealing compound is adhered between the second base plate and the electric conduction flexible circuit to tightly seal the electrophoretic display layer between the first base plate and the second base plate. The driving chip is connected with the diving circuit, and the electrophoretic display layer comprises an opening to expose the driving chip. The invention also discloses a manufacturing method of the electrophoretic display.

The invention discloses a multilayered circuit board structure with a buried element and a manufacturing method. The manufacturing method comprises the following steps of providing a substrate with a first surface and first contraposition marks; arranging semiconductor elements on the substrate; forming a dielectric layer, which covers the semiconductor element, is provided with a second surface and has second contraposition marks, on the substrate; enabling the second contraposition marks to correspond to the semiconductor elements; forming a first through hole group which comprises a plurality of through holes extending to the first surface from the second surface and a second through hole group which comprises a plurality of second through holes extending to the semiconductor elements from the second surface by using the first contraposition marks and the second contraposition marks as contraposition references; forming a wire group on the second surface; and patterning the wire group in two stages so as to respectively obtain a first wire group and a second wire group which are connected with each other.

The invention discloses a static random access memory, which comprises a plurality of static random access memory units arranged on a substrate, wherein each static random access memory unit comprises at least one grid structure arranged on the substrate, a plurality of fin structures located on the substrate, a first interlayer dielectric layer surrounding the grid structure, a first contact plug arranged in the first interlayer dielectric layer, and a second interlayer dielectric layer arranged on the first interlayer dielectric layer, wherein the arrangement directions of the fin structures are vertical to those of the grid structures; and each first contact plug is in a long strip form and is in contact with two corresponding fin structures at the same time.

The invention discloses a manufacturing method of a semiconductor element, which at least comprises the steps of firstly providing a substrate, wherein the substrate is internally defined with a storage region and a peripheral region, the storage region contains a plurality of storage units, each storage unit at least comprises a first transistor and a capacitor structure, the peripheral region contains at least one second transistor; then forming a first insulating layer in a mode of atomic layer deposition in the storage region and the peripheral region, wherein the first insulating layer atleast covers the capacitor structure of each storage unit in the storage region and the second transistor in the peripheral region; then forming a second insulating layer which covers the first insulating layer; and forming a contact structure in the second insulating layer in the peripheral region, wherein the contact structure is at least electrically connected with the second transistor.