Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method for contact plug layout

A technology of contact plugs and manufacturing methods, which is applied in the direction of instruments, electrical digital data processing, electrical components, etc., can solve problems such as manufacturing process yield and product problems, short circuits, etc., and achieve the effect of improving the production process yield

Active Publication Date: 2018-09-25
UNITED MICROELECTRONICS CORP +1
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the integration of DRAM memory cells increases, the storage electrode contact plug SC and the bit line contact plug BC in the COB may be electrically connected through the active area AA, resulting in a short circuit, such as figure 1 circled in
The storage electrode contact plug-bit line contact plug short circuit (SC-BC short) will cause serious manufacturing process yield and product problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for contact plug layout
  • Manufacturing method for contact plug layout
  • Manufacturing method for contact plug layout

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] Those familiar with this technology should understand that the following provides a number of different embodiments to disclose different features of the present invention, but not limited thereto. In addition, the drawings disclosed below are simplified to express the features of the present invention more clearly, so the drawings disclosed below do not show all the elements of a specified element (or device). In addition, the drawings disclosed below are idealized schematic diagrams according to the present invention, so variations from these schematic diagrams, such as differences due to manufacturing techniques and / or tolerances, are expected. Therefore, the disclosure of the present invention should not be limited to the specific shapes disclosed in the accompanying drawings, but should also include deviations in shapes caused by manufacturing techniques.

[0059] In addition, those familiar with the technology should understand that in the following descriptions, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method for a contact plug layout. The manufacturing method comprises the following steps of (a) receiving a plurality of active area patterns and a plurality ofburied gate patterns parallel to one another, wherein each active area pattern overlaps the two buried gate patterns separately to form two overlapping areas in the active area pattern and a contactplug area between the two overlapping areas; (b) forming contact plug patterns on the contact plug areas respectively, wherein the contact plug patterns comprise a parallelogram shape, the inner angleof the parallelogram shape is not equal to 90 degrees, the contact plug patterns overlap parts of buried gate patterns in all active areas respectively, and the step (a) and step (b) are conducted inone computer device.

Description

technical field [0001] The invention relates to a manufacturing method of a contact plug layout, in particular to a manufacturing method of a bit line contact plug layout of a semiconductor memory element. Background technique [0002] Dynamic random access memory (DRAM for short hereinafter) is a main volatile memory, and is an indispensable key component in many electronic products. DRAM is composed of a large number of memory cells to form an array area for storing data, and each memory cell is composed of a metal oxide semiconductor (MOS) transistor and a capacitor. Composed in series. [0003] The capacitor is electrically connected to the conductive structure formed in the electrode contact hole (node ​​contact) through the storage electrode (storage node), and forms a one-bit access path with the drain of the MOS transistor to achieve the purpose of storing or outputting data . With the improvement of the DRAM integration level, it is necessary to reduce the area o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50H01L27/02H01L27/108
CPCH01L27/0207G06F30/392H10B12/30G06F30/394H10B12/34H10B12/053H10B12/485
Inventor 王嫈乔童宇诚何建廷冯立伟黄书涵
Owner UNITED MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products