Semiconductor component and manufacturing method thereof

Abstract

The invention discloses a semiconductor component and a manufacturing method thereof. The semiconductor component comprises a substrate which defines at least one storage area, a mesh type isolation structure formed on the substrate and storage electrode contact plugs. Multiple storage units are arranged in the storage area. The mesh type isolation structure comprises multiple basically homogeneous dielectric sidewalls and first openings defined by the dielectric sidewalls. The storage electrode contact plugs are arranged in the first openings and electrically connected with the storage unitsrespectively.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a semiconductor memory element and a manufacturing method thereof. Background technique [0002] Dynamic random access memory (DRAM for short hereinafter) is a main volatile memory, and is an indispensable key component in many electronic products. DRAM is composed of a large number of memory cells to form an array area for storing data, and each memory cell is composed of a metal oxide semiconductor (MOS) transistor and a capacitor. Composed in series. [0003] The capacitor is electrically connected to the conductive structure formed in the electrode contact hole (node ​​contact) through the storage electrode (storage node), and forms a one-bit access path with the drain of the MOS transistor to achieve the purpose of storing or outputting data . With the improvement of the DRAM integration level, it is necessary to reduce the area occupied by the...

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Problems solved by technology

[0004] As the integration level of DRAM increases, the overlay margin between the contact plug structure and the bit line used to provide the electrical connection of the storage electrode in the COB decreases accordingly, in other words, it causes a problem of manufacturing process yield.

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