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Formation method of digital micromirror device

A digital micromirror device and patterning technology, applied in instruments, optical components, optics, etc., can solve the problems of inability to remove the patterned photoresist layer, and the inability to remove the hinge patterned photoresist layer. Plasma damage, reduced time, improved performance

Active Publication Date: 2017-09-26
SEMICON MFG INT (SHANGHAI) CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The problem to be solved by the present invention is: the existing digital micromirror device formation method cannot completely remove the patterned photoresist layer above the hinge
[0014] Another problem to be solved by the present invention is: the existing digital micromirror device formation method cannot completely remove the patterned photoresist layer above the fixed electrode

Method used

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  • Formation method of digital micromirror device
  • Formation method of digital micromirror device
  • Formation method of digital micromirror device

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Embodiment Construction

[0048] After research and analysis, it is found that the reason why the existing digital micromirror device formation method cannot remove the patterned photoresist layer above the hinge is: Figure 5A with Figure 5B As shown, the patterned photoresist layer 11 is used to protect the dielectric layer 22 in the hinge 2, so that the dielectric layer 22 will not be etched during the process of forming the hinge 2 by dry etching. In order to make the patterned photoresist layer 11 can play this role, it is necessary to ensure that the patterned photoresist layer 11 has sufficient thickness; Figure 6A with Figure 6B As shown, in the step of removing the patterned photoresist layer 11 by using the wet etching method, in order to enable the patterned photoresist layer 11 to be removed cleanly, it is necessary to ensure that the wet etching takes a long time, but in this way It will cause the two ends of the dielectric layer 22 in the hinge 2 to be corroded by the etchant. In ord...

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Abstract

A method for forming a digital micromirror device, comprising: providing a substrate formed with a micromirror device control circuit; forming a first sacrificial layer on the substrate; forming a conductive material layer on the first sacrificial layer, and a medium on the conductive material layer The material layer and the patterned photoresist layer on the dielectric material layer; using the patterned photoresist layer as a mask, the dielectric material layer and the conductive material layer are dry-etched to form a hinge; after the hinge is formed, A wet etching method is used to remove part of the patterned photoresist layer; anisotropic dry etching is performed on the remaining part of the patterned photoresist layer. While ensuring that the entire patterned photoresist layer is cleanly removed, the first sacrificial layer under the hinge will not be corroded so that the hinge collapse will not occur, and the dielectric layer in the hinge will not be etched. The plasma damage to the substrate is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a digital micromirror device. Background technique [0002] Digital Micro Display (DMD) is a new type of all-digital flat panel display device, which integrates a reflective micromirror array and CMOS SRAM on the same chip. Since the reflective micromirror occupies most of the display area of ​​the digital micromirror device unit, a system with high brightness and high image quality can be produced. [0003] figure 1 It is an exploded view of the three-dimensional structure of an existing digital micromirror device, such as figure 1 As shown, the digital micromirror device includes: a substrate 1, a micromirror device control circuit is formed on the substrate 1; a digital micromirror array on the substrate 1, and each digital micromirror in the digital micromirror array includes: through two A hinge (hinge) 2 above the base 1 is supported by a firs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B26/08
Inventor 伏广才汪新学倪梁
Owner SEMICON MFG INT (SHANGHAI) CORP
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