Test structure for Young's modulus of thick-film silicon material on insulating substrate

Abstract

The invention provides a testing structure for the Young's modulus of the thick-film silicon material on the insulating substrate, which is used for measuring the Young's modulus of the thick-film silicon material on the insulating substrate. The test structure consists of three parts: a relative electrothermal drive unit; a stopper unit with a micrometer vernier; and an electrostatically driven cantilever beam unit. The opposite type electrothermal driving unit is vertically connected with the stopper unit with micrometer vernier. The electrostatic force is used to drive the cantilever beam to perform in-plane lateral bending motion. The stopper structure is used to control the amount of bending and to prevent measurement instability caused by snap-in. The movement of the stop structure is realized by the thermal expansion driving structure, and the movement amount of the stop structure is measured by the vernier. In order to prevent the inaccurate position measurement caused by process errors, two position measurement methods are used, that is, the first thermally driven stopper structure touches the cantilever beam, reads the cursor position, and then reduces the drive current to generate a small gap. This gap is recorded by the vernier as the final bending deflection.

Description

technical field [0001] The invention provides a testing structure for Young's modulus of thick film silicon material on an insulating substrate. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessar...

AI Technical Summary

Problems solved by technology

An important problem in the electrostatic drive method is the pull-in phenomenon. Since the pull-in phenomenon is an unsteady state, the accuracy of the measurement data is also unstable. Therefore, the pull-in phenomenon should be avoided as much as possible in the electrostatic drive structure.

Images