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Fabrication process of 100V Schottky diode

A Schottky diode and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low implantation doping concentration, uneven push junction, thin epitaxial thickness, etc., and achieve the doping concentration High, not easy to electrostatic breakdown, the effect of thick epitaxy

Inactive Publication Date: 2015-04-29
TIANSHUI TIANGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Disadvantages of this process: due to the thin epitaxial thickness of the main process of Schottky diodes, low implanted doping concentration, low annealing temperature causes shallow junctions, uneven push junctions, and low static electricity. Generally, the static electricity is about 8kv, resulting in static electricity instability. Electrostatic breakdown is prone to occur during the

Method used

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Examples

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Effect test

Embodiment 1

[0029] A kind of 100V Schottky diode manufacturing process, its steps are:

[0030] a. Substrate silicon wafer treatment. The substrate silicon wafer is cleaned with 1# and 2# cleaning solutions at 70°C for 10 minutes, rinsed with water for 10 minutes, and dried before use. The 1# cleaning solution is NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5, 2# cleaning solution HCL:H 2 o 2 :H 2 O=1:1:5;

[0031] b. Initial oxidation: after completing step a, the substrate silicon wafer is cleaned, and then the initial oxidation process is carried out. First, put the silicon wafer into the quartz boat, and then enter the boat into the quartz furnace tube. The speed of the boat is 20cm / s. After the boat enters, cover For good grinding, nitrogen gas (6 liters per minute) was introduced at 750 ° C for 30 minutes, the temperature was raised from 750 ° C to 950 ° C, and the temperature was kept at 950 ° C, nitrogen was stopped and replaced by oxygen, and oxygen was introduced (3.5 liters per minute)...

Embodiment 2

[0050] A kind of 100V Schottky diode manufacturing process, its steps are:

[0051] a. Substrate silicon wafer treatment. The substrate silicon wafer is cleaned with 1# and 2# cleaning solutions at 80°C for 11 minutes each, rinsed with water for 9 minutes, and dried before use. The 1# cleaning solution is NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5, 2# cleaning solution HCL:H 2 o 2 :H 2 O=1:1:5;

[0052] b. Initial oxidation: After the substrate silicon wafer is cleaned in step a, the initial oxidation process is carried out. First, put the silicon wafer into the quartz boat, and then enter the boat into the quartz furnace tube. The speed of the boat is 21cm / s. After the boat enters, cover For good grinding, nitrogen gas (7 liters per minute) was introduced at 745°C for 29 minutes, the temperature rose from 745°C to 940°C, and the temperature was maintained at 945°C. The nitrogen gas was switched to oxygen, and oxygen was introduced (3.5 liters per minute) for 22 Minutes later, ch...

Embodiment 3

[0071] A kind of 100V Schottky diode manufacturing process, its steps are:

[0072] a. Substrate silicon wafer treatment. The substrate silicon wafer is cleaned with 1# and 2# cleaning solutions at 80°C for 10 minutes, rinsed with water for 11 minutes, and dried before use. The 1# cleaning solution is NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5, 2# cleaning solution HCL:H 2 o 2 :H 2 O=1:1:5;

[0073] b. Initial oxidation: after completing step a, the substrate silicon wafer is cleaned, and then the initial oxidation process is carried out. First, put the silicon wafer into the quartz boat, and then enter the boat into the quartz furnace tube. The speed of the boat is 20cm / s. After the boat enters, cover For good grinding, nitrogen gas (7 liters per minute) was introduced at 750°C for 31 minutes, the temperature was raised from 750°C to 950°C, and the temperature was kept at 950°C. Nitrogen was stopped and replaced with oxygen, and oxygen was introduced (3.5 liters per minute) 21 M...

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PUM

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Abstract

The invention provides a process for improving the static electricity of a 100V Schottky diode. 4.5E+15-6.5E+15 high dose ion implantation is adopted, so that the impurity concentration of a PN junction is increased, besides, a high annealing temperature is adopted, so that the junction depth and the homogeneity of devices are improved. The Schottky diode is a device with a surface shallow junction, the larger the doping concentration is, the deeper the junction depth is, and the pressure resistance of the device is stronger. The junction depth of the 100V Schottky diode, prepared by the process disclosed by the invention, is 1.8 mum to 2.2 mum, and the static electricity of the Schottky diode is 18KV. The extension thickness is thick, the poured doping concentration is high, the annealing temperature is high, the junction is deep, and the homogeneity is good. The static electricity is greatly improved, and the stability of static electricity batches is consistent. The static electricity is high, so that in a use process of the device, the probability of static shock is low.

Description

technical field [0001] The invention relates to the technical field of diode technology, in particular to a 100V Schottky diode manufacturing technology. Background technique [0002] The main manufacturing process of Schottky diodes currently used: [0003] ① The silicon wafer epitaxy parameters are set to be thin, generally (epitaxy thickness: 9-10.5um, resistivity 2.0-2.2Ω.cm) [0004] ② Initial oxidation 7000-10000? [0005] ③ Injection dose 1.0-3.5E+15 [0006] ④ Annealing 1070-1090℃ [0007] Disadvantages of this process: due to the thin epitaxial thickness of the main process of Schottky diodes, low implanted doping concentration, low annealing temperature causes shallow junctions, uneven push junctions, and low static electricity. Generally, the static electricity is about 8kv, resulting in static electricity instability. Electrostatic breakdown is prone to occur during the process. Contents of the invention [0008] The technical problem to be solved by the p...

Claims

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Application Information

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IPC IPC(8): H01L21/329
CPCH01L29/66143
Inventor 安飚张志向杜林德张晶辉
Owner TIANSHUI TIANGUANG SEMICON
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