A Manufacturing Technology of 40v Schottky Diode with Reduced Secondary Breakdown Ratio
A Schottky diode, secondary breakdown technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. The effect of increasing junction depth and uniformity and increasing impurity concentration
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Embodiment 1
[0035] A 40V Schottky diode manufacturing process (only applied to 40V) that reduces the secondary breakdown ratio. The steps are:
[0036] a. Substrate silicon wafer cleaning: substrate silicon wafers are cleaned with NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 o 2 :H 2 O = 1:1:5 cleaning solution at 75°C for 10 minutes each, rinse the substrate wafers with water for 10 minutes, and dry them before use;
[0037] b. Initial oxidation: The substrate silicon wafer that has completed step a is subjected to the initial oxidation process. First, put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube. The boat speed is 20cm / s. After the boat enters, cover the grinding port. Nitrogen was introduced at 750°C, 6 liters per minute, for 30 minutes, the temperature was raised from 750°C to 950°C, and the temperature was kept at 950°C. Stop nitrogen and change to oxygen. After 10 minutes of oxygen, change to oxygen and hydrog...
Embodiment 2
[0059] A 40V Schottky diode manufacturing process (only applied to 40V) that reduces the secondary breakdown ratio. The steps are:
[0060] a. Substrate silicon wafer cleaning: substrate silicon wafers are cleaned with NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 o 2 :H 2 O = 1:1:5 cleaning solution at 70°C for 9 minutes each, rinse the substrate wafer with water for 9 minutes, and dry it for later use;
[0061] b. Initial oxidation: The substrate silicon wafer that has completed step a is subjected to the initial oxidation process. First, put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube. The boat speed is 19cm / s. After the boat enters, cover the grinding port. Nitrogen was fed at 747°C, 5 liters per minute, 29 minutes, the temperature rose from 747°C to 947°C, and the temperature was kept at 947°C. Stop nitrogen and change to oxygen. After 9 minutes of oxygen, change to oxygen and hydrogen for hydrogen Oxy...
Embodiment 3
[0083] A 40V Schottky diode manufacturing process (only applied to 40V) that reduces the secondary breakdown ratio. The steps are:
[0084] a. Substrate silicon wafer cleaning: substrate silicon wafers are cleaned with NH 3 h 2 O:H 2 o 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 o 2 :H 2 O = 1:1:5 cleaning solution at 80°C for 11 minutes each, rinse the substrate wafer with water for 1 minute, and dry it before use;
[0085] b. Initial oxidation: The substrate silicon wafer that has completed step a is subjected to the initial oxidation process. First, put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube. The boat speed is 21cm / s. After entering the boat, cover the grinding port. Nitrogen was fed at 753°C, 7 liters per minute, 31 minutes, the temperature rose from 753°C to 953°C, and the temperature was kept at 953°C. Stop nitrogen and change to oxygen. After 11 minutes of oxygen, change to oxygen and hydrogen for hydrogen Oxy...
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