A Manufacturing Technology of 40v Schottky Diode with Reduced Secondary Breakdown Ratio

A Schottky diode, secondary breakdown technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. The effect of increasing junction depth and uniformity and increasing impurity concentration

Active Publication Date: 2019-04-30
TIANSHUI TIANGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Disadvantages of this process: the secondary breakdown rate is 30%-100% higher, the Schottky breakdown curve is poor, and the reliability is poor during the use of the device
[0008] The Schottky diodes currently used in the

Method used

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  • A Manufacturing Technology of 40v Schottky Diode with Reduced Secondary Breakdown Ratio
  • A Manufacturing Technology of 40v Schottky Diode with Reduced Secondary Breakdown Ratio
  • A Manufacturing Technology of 40v Schottky Diode with Reduced Secondary Breakdown Ratio

Examples

Experimental program
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Example Embodiment

[0034] Example 1

[0035] A 40V Schottky diode fabrication process that reduces the secondary breakdown ratio (only applied to 40V), the steps are:

[0036] a. Cleaning of the substrate silicon wafer: the substrate silicon wafer is made of NH 3 H 2 O:H 2 O 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 O 2 :H 2 The cleaning solution of O = 1:1:5 was cleaned at 75°C for 10 minutes each, the cleaned substrate silicon wafer was rinsed for 10 minutes, and dried for later use;

[0037] b. Initial oxidation: After completing the initial oxidation process of the substrate silicon wafer in step a, first put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube, the boat speed is 20cm / s, and the boat is finished, and the grinding mouth is covered. Introduce nitrogen at 750 ℃, 6 liters per minute, 30 minutes, the temperature rises from 750 ℃ ​​to 950 ℃, the temperature is kept at 950 ℃, stop nitrogen and change to oxygen, after 10 minutes of ox...

Example Embodiment

[0058] Example 2

[0059] A 40V Schottky diode fabrication process that reduces the secondary breakdown ratio (only applied to 40V), the steps are:

[0060] a. Cleaning of the substrate silicon wafer: the substrate silicon wafer is made of NH 3 H 2 O:H 2 O 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 O 2 :H 2 The cleaning solution of O = 1:1:5 was cleaned at 70°C for 9 minutes each, the cleaned substrate silicon wafer was rinsed for 9 minutes, and dried for later use;

[0061] b. Initial oxidation: After completing the initial oxidation process of the substrate silicon wafer in step a, first put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube, the boat speed is 19cm / s, and the boat is finished, and the grinding mouth is covered. Introduce nitrogen at 747 °C, 5 liters per minute, 29 minutes, the temperature rises from 747 °C to 947 °C, the temperature is maintained at 947 °C, stop nitrogen and change to oxygen, after 9 minutes ...

Example Embodiment

[0082] Example 3

[0083] A 40V Schottky diode fabrication process that reduces the secondary breakdown ratio (only applied to 40V), the steps are:

[0084] a. Cleaning of the substrate silicon wafer: the substrate silicon wafer is made of NH 3 H 2 O:H 2 O 2 :H 2 O=1:1:5 cleaning solution and HCL:H 2 O 2 :H 2 The cleaning solution of O = 1:1:5 was cleaned at 80°C for 11 minutes each, the cleaned substrate silicon wafer was rinsed for 1 minute, and dried for later use;

[0085] b. Initial oxidation: After completing the initial oxidation process of the substrate silicon wafer in step a, first put the silicon wafer into a quartz boat, and then enter the boat into the quartz furnace tube, the boat speed is 21cm / s, and the boat is finished, and the grinding mouth is covered. Introduce nitrogen at 753 °C, 7 liters per minute, 31 minutes, the temperature rises from 753 °C to 953 °C, the temperature is kept at 953 °C, stop nitrogen and change to oxygen, after 11 minutes of ox...

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Abstract

The invention provides a 40 V Schottky diode manufacturing process capable of reducing the secondary breakdown ratio. The Schottky diode manufacturing process includes the main step of setting epitaxy parameters of a silicon wafer, wherein the epitaxy thickness is 5.2-5.4 micrometers, the resistivity is 0.84-0.92 omega. cm, the initial oxidation parameter is 5000-7000 a, the implantation dose is 2E-3E+15, and the annealing temperature is 1070-1080 DEG C. According to the 40 V Schottky diode manufacturing process, the high ion implantation dose of 2E-3E+15 is adopted, so that the impurity concentration of PN junctions is increased; meanwhile, the high annealing temperature is adopted, so that the junction depth of a device is increased, and the uniformity of the device is improved; the larger the dosage concentration and the junction depth are, the stronger the voltage withstanding capability of the device will be. The Schottky diode is a surface shallow junction device, the secondary breakdown ratio is reduced to 5% or below, a Schottky breakdown curve is good, and the device has high reliability in the use process.

Description

technical field [0001] The invention relates to the technical field of diode technology, in particular to a manufacturing technology of a 40V Schottky diode with reduced secondary breakdown ratio. Background technique [0002] The main manufacturing process of Schottky diodes currently used: [0003] ① The silicon wafer epitaxy parameters are set to be thin, generally (epitaxy thickness: 4.6-5.1 um resistivity 0.84-0.92Ω.cm) [0004] ② Initial oxidation 5000-7000À [0005] ③ Injection dose 5E+14-1.5E+15 [0006] ④ Annealing 1050-1060℃ [0007] Disadvantages of this process: the secondary breakdown rate is 30%-100% higher, the Schottky breakdown curve is poor, and the reliability is poor during the use of the device. [0008] The Schottky diodes currently used are mainly thin in epitaxial thickness, low in doping concentration, and low annealing temperature resulting in shallow junctions and uneven push junctions, resulting in high secondary breakdown ratios and poor Scho...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L21/265H01L21/324H01L29/872
CPCH01L21/265H01L21/324H01L29/66143H01L29/872
Inventor 张晓情杜林德
Owner TIANSHUI TIANGUANG SEMICON
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