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Measuring device, measuring method and application of material micro-area conductance and thermoelectric properties

A measuring method and technology of measuring device, which are applied in the direction of measuring device, measuring electrical variable, measuring resistance/reactance/impedance, etc., and can solve the problems of inability to measure the conductance and thermoelectric potential of material in micro-area.

Active Publication Date: 2017-07-18
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problem in the prior art that it is impossible to measure the conductance and thermoelectric potential of material micro-area, the present invention provides a measuring device, measurement method and application of material micro-area conductance and thermoelectric properties based on atomic force microscopy technology

Method used

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  • Measuring device, measuring method and application of material micro-area conductance and thermoelectric properties
  • Measuring device, measuring method and application of material micro-area conductance and thermoelectric properties
  • Measuring device, measuring method and application of material micro-area conductance and thermoelectric properties

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: The conductance of film sample is measured

[0039] Such as figure 1As described above, the thin film sample 2 is deposited on the conductive metal substrate 3, the conductive metal substrate 3 is adhered to the temperature control sample stage 4, the conductive probe 1 is in contact with the surface of the thin film sample 2 under the control of the atomic force microscope controller 11, and the thin film sample 2 The conductive metal base 3 below forms two electrodes, and the host computer 12 controls the first static contact of the first relay 6 and the second relay 7 to be in a closed state so that the conductive probe 1 and the conductive metal base 3 are connected to the programmable current source meter 9 connected, the host 12 controls the program-controlled current source meter 9 to output a series of voltages on the conductive probe 1 and the conductive metal substrate 3, and measure the current value returned from the conductive probe 1 and the ...

Embodiment 2

[0040] Embodiment 2: measure the thermoelectric potential of film sample

[0041] The thin film sample 2 is deposited on the conductive metal substrate 3, the conductive metal substrate 3 is adhered to the temperature control sample stage 4, the sample 2 to be tested is heated to a known temperature higher than room temperature through the temperature control sample stage 4, and the conductive probe 1 Contact with the film sample 2 surface under the control of the atomic force microscope controller 11, form two electrodes with the conductive metal substrate 3 below the film sample 2, maintain the conductive probe 1 at room temperature through the high thermal conductivity cold storage 5, and conduct the conductive probe 1 A temperature gradient of a micro-region will be generated nearby, and this temperature gradient forms a potential difference between the conductive metal substrate 3 and the conductive probe 1, and the host computer 12 controls the second static contact of th...

Embodiment 3

[0042] Example 3: Simultaneous imaging of thermoelectric potential and sample morphology of thin film samples

[0043] The thin film sample 2 is deposited on the conductive metal substrate 3, the conductive metal substrate 3 is adhered to the temperature control sample stage 4, the sample 2 to be tested is heated to a known temperature higher than room temperature through the temperature control sample stage 4, and the conductive probe 1 Contact with the film sample 2 surface under the control of the atomic force microscope controller 11, form two electrodes with the conductive metal substrate 3 below the film sample 2, maintain the conductive probe 1 at room temperature through the high thermal conductivity cold storage 5, and conduct the conductive probe 1 A temperature gradient of a micro-region will be generated nearby, and this temperature gradient forms a potential difference between the conductive metal substrate 3 and the conductive probe 1, and the host computer 12 con...

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PUM

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Abstract

The invention provides a device for measuring micro-zone electric conductance and thermoelectric properties of a material. The device comprises a testing system and a control and information processing system; the testing system comprises a conductive probe (1), a refrigeration storage (5), a conductive substrate (3) and a temperature control sample table (4); the conductive probe (1) is connected with the refrigeration storage (5); the conductive substrate (3) is adhered to the temperature control sample table (4); the control and information processing system comprises a first relay (6), a second relay (7), a front voltage amplifier (8), a program controlling current source table (9), a program control voltage meter (10), an atomic force microscope controller (11), a host computer (12) and an atomic force microscope host (13). With the adoption of the device, the micro-zone electric conductance of a sample, the seebeck coefficient measuring, the electric conductance and thermoelectric force alterative measuring, and synchronous imaging of thermoelectric force and sample appearance can be carried out.

Description

technical field [0001] The invention belongs to the field of conductance and thermoelectric property measurement, and relates to a measurement device, a measurement method and an application thereof for the conductance and thermoelectric properties of a micro-area of ​​a material, in particular to a measurement device for the conductance and thermoelectric properties of a micro-area of ​​a material based on atomic force microscopy technology , Measurement methods and their uses. Background technique [0002] The thermoelectric effect can directly convert thermal energy into electrical energy or directly convert electrical energy into thermal energy, reducing the intermediate process of energy conversion. Thermoelectric materials have great application prospects in solving energy and environmental problems. The Seebeck coefficient represents the magnitude of the thermoelectric potential generated by a thermoelectric material under a unit temperature difference, which can char...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01Q60/24G01R27/02
Inventor 姜星宾曾齐斌王小伟程志海裘晓辉
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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