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A surface treatment method for a light-absorbing layer of a kesterite-structured thin-film solar cell

A technology for solar cells and light-absorbing layers, applied in the field of solar cells, can solve problems such as high defect density, affect the photoelectric conversion efficiency of solar cells, and mismatch of p-n junction energy levels, achieve passivation of interface defects, overcome surface defects, and improve Effect of open circuit voltage and fill factor

Active Publication Date: 2017-09-19
浙江铱太科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the kesterite structure films prepared by various methods have surface defects, and the p-n junction formed with the buffer layer also has problems such as energy level mismatch and high defect density, which will generate a large number of carrier recombination centers, seriously Affect the photoelectric conversion efficiency of solar cells

Method used

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  • A surface treatment method for a light-absorbing layer of a kesterite-structured thin-film solar cell
  • A surface treatment method for a light-absorbing layer of a kesterite-structured thin-film solar cell
  • A surface treatment method for a light-absorbing layer of a kesterite-structured thin-film solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Preparation of kesterite structure thin film solar cell light absorbing layer Cu 2 CdGeSe 4 Afterwards, the sample was first mixed with 0.1mol / L Na + , 0.7mol / L Ca 2+ and 0.5mol / L Fe 3+ Soak in a metal salt solution (solution temperature 10°C, immersion time 3.5h), and then keep it in a nitrogen atmosphere at 150°C for 90 minutes, and finally prepare a device.

[0025] Prepared Cu 2 CdGeSe 4 The open circuit voltage of the thin film solar cell is 403mV, and the short circuit current density is 26.98mA / cm 2 , the fill factor is 48%, and the photoelectric conversion efficiency of the cell is 5.22%. Such as figure 1 Shown is the SEM image of the surface after ion immersion treatment, by figure 1 It can be seen that the surface morphology is dense and smooth, the grain size is large, and there are no obvious holes or defects.

Embodiment 2

[0027] Preparation of kesterite structure thin film solar cell light absorbing layer Cu 2 ZnSnS 4 Afterwards, the sample was first mixed with 0.3mol / LK + , 0.5mol / LAg + , 0.6mol / LMg 2+ , 0.5mol / LCu 2+ , 0.4mol / LZn 2+ , 0.4mol / LCr 3+ Soak in a metal salt solution (solution temperature 30°C, immersion time 2.5h), and then keep it in an argon atmosphere at 250°C for 70 minutes, and finally prepare a device.

[0028] The performance of the device without immersion annealing process is shown in Table 1. It can be seen from the table that the open circuit voltage, fill factor and photoelectric conversion efficiency of the device after the treatment have been improved to a certain extent.

[0029] Table 1 device performance comparison

[0030]

Embodiment 3

[0032] Preparation of kesterite structure thin film solar cell light absorbing layer Ag 4 CdG 4 Afterwards, the sample was first mixed with 0.3mol / L In 3+ soaked in a metal salt solution (solution temperature 50°C, soaking time 2h), and then kept at 350°C for 50 minutes under a sulfur vapor atmosphere, and finally prepared into a device.

[0033] Prepared Ag 4 CdG 4 The open circuit voltage of the thin film solar cell is 615mV, and the short circuit current density is 17.74mA / cm 2 , the fill factor is 47%, and the photoelectric conversion efficiency of the cell is 5.13%. Such as figure 2 As shown, it is the fitting curve of In element under XPS detection. It can be seen from the detection results that the effective doping and incorporation of metal elements can be realized by soaking.

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Abstract

The invention discloses a surface treatment method of a custerite structure thin film solar cell light absorption layer. The surface treatment method of the custerite structure thin film solar cell light absorption layer includes: dipping a light absorption layer (Cul-aAga)2(Zn1-bCdb)(Sn1-cGec)(S1-dSed)4 in a solution which contains metal ions, and performing annealing treatment, wherein a, b, c and d are respectively independently selected from 0 to 1. The custerite structure thin film solar cell light absorption layer after being processed through the surface treatment method of the custerite structure thin film solar cell light absorption layer can improve surface defects of the light absorption layer well, can effectively improve open circuit voltage, a filling factor and photoelectric conversion efficiency of a solar cell, and the surface treatment method of the custerite structure thin film solar cell light absorption layer is high in raw material usage rate, environmentally friendly and low in cost, and can be popularized and applied on a large scale in production.

Description

technical field [0001] The invention discloses a surface treatment method for a light-absorbing layer of a kesterite-structure thin-film solar cell, belonging to the technical field of solar cells. Background technique [0002] In recent years, due to the increasingly serious environmental pollution and energy crisis, people have paid more attention to and researched on renewable energy, and also greatly promoted the vigorous development of new energy industries such as solar cells. The compound thin-film solar cell has become one of the most promising solar cells due to its low cost and high theoretical photoelectric conversion efficiency, and has become the focus of development in the photovoltaic field. The development has gradually moved from academia to industry, and the highest photoelectric conversion efficiency of more than 21% has been obtained. However, In and Ga in this type of solar cell are scattered metals, expensive and have limited reserves, which has become ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/186H01L31/1864H01L31/1876Y02E10/50Y02P70/50
Inventor 刘芳洋高春晖蒋良兴秦勤杨佳赵联波
Owner 浙江铱太科技有限公司
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