A double groove field effect transistor and its preparation method

Abstract

The invention provides a double-trench field effect tube and a manufacturing method thereof. The manufacturing method at least comprises a layout method for the field effect tube. The layout method at least comprises the following steps: providing a field effect tube, wherein the field effect tube comprises a plurality of lines of device structures; setting the left sides of source regions in one line of device structures as contact electrodes, and setting the right sides of the source regions into trench gates; setting the left sides of the source regions in adjacent lines into trench gates, and setting the right sides of the source regions into source region contact electrodes; repeating the steps above alternatively to form a trench gate layout structure of the double-trench field effect tube, wherein the trench gates in each line are interconnected electrically. By adopting the layout structure, a wider source region area can be obtained, the problem of unstable start voltage since pores are too close to the trenches is solved, the areas of the source region contact electrodes are increased, and the avalanche characteristic of a device is improved. Moreover, the trench density is increased, so that lower Rsp is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a double-groove field effect transistor and a preparation method thereof. Background technique [0002] Power transistors are generally used to control the reasonable operation of power electronic devices, and provide high-power output for loads through power electronic devices. Power transistors have been widely used in the scanning circuits of electronic equipment for controlling power output, high-frequency high-power transistors, such as color TVs, monitors, oscilloscopes, horizontal scanning circuits of large game consoles, video playback circuits, power amplifiers of transmitters, etc. It is also widely used in circuits such as walkie-talkies, radio frequency output circuits of mobile phones, high-frequency oscillation circuits and high-speed electronic switching circuits. [0003] Generally speaking, power devices usually work under high voltage...

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Problems solved by technology

[0015] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a double-groove field effect transistor and its preparation method, which are used to solve the problems of small source area and small source contact hole area in the prior art

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