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Ultra-high-current high-frequency FRD chip and manufacturing method thereof

A manufacturing method and FRD technology, which are applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of large forward voltage, little consideration of the influence of longitudinal diffusion parameters and distribution, and large power consumption. High avalanche characteristics, favorable for soft recovery and fast recovery

Active Publication Date: 2012-09-19
JINZHOU SHENGHE POWER ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the minimum silicon wafer thickness for manufacturing low-voltage fast recovery diodes is 0.24. For the production of ultra-high-current and high-frequency FRD diodes, it will cause excessive forward voltage and excessive power consumption; and the method of controlling the lifetime of minority carriers is commonly used to expand gold and platinum and electronic Irradiation, the method of longitudinal defect concentration distribution is seldom considered, especially the influence of longitudinal diffusion parameters and distribution is seldom considered
[0005] Therefore, the existing fast recovery diodes have low application frequency, low efficiency, and large device volume, especially strong high-current signals that cause serious pollution to the human body

Method used

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  • Ultra-high-current high-frequency FRD chip and manufacturing method thereof
  • Ultra-high-current high-frequency FRD chip and manufacturing method thereof
  • Ultra-high-current high-frequency FRD chip and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] Such as figure 1 , figure 2 As shown, the manufacturing method of the ultra-high-current high-frequency FRD diode chip is as follows:

[0040] 1. Wafer preparation

[0041] Use an N-type silicon single wafer with a thickness of 170 μm and a uniform cross-sectional resistivity of 3Ω / □ to 5Ω / □ as the N-type substrate 2, △ρn / ρn (resistivity change / average resistivity)=7%, silicon The width of the base region is 1.1 times the width of the space charge region to ensure a non-through structure; then the silicon wafer is cleaned.

[0042] 2. N + diffusion

[0043] Fabricate N on N-type substrate 2 + Region 3, the junction depth of the N+ region 3 is 20 μm, and the diffusion resistance R sp+ =1.6Ω / □.

[0044] 3. N ++ and P ++ diffusion

[0045] Perform N on the front and back of the N-type substrate 2 simultaneously. ++ and P ++ Diffuse, make N ++ Zone 4 and P ++ District 1, where N ++ The junction depth of region 4 is 20μm, and the diffusion resistance R sp+ =...

Embodiment 2

[0051] Such as figure 1 , figure 2 As shown, the manufacturing method of the ultra-high-current high-frequency FRD diode chip is as follows:

[0052] 1 Wafer preparation

[0053] Use an N-type silicon single wafer with a thickness of 190 μm and a uniform cross-sectional resistivity of 5Ω / □~8Ω / □ as the N-type substrate 2, △ρn / ρn=10%, and the width of the base area of ​​the silicon wafer is 1.12 times the space charge area Width, ensure non-through structure; then silicon wafer cleaning.

[0054] 2. N + diffusion

[0055] Fabricate N on N-type substrate 2 + District 3, the N + Zone 3 junction depth 24μm, diffusion resistance R sp+ =2Ω / □;

[0056] 3. N ++ and P ++ total diffusion

[0057] Perform N on the front and back of the N-type substrate 2 simultaneously. ++ and P ++ Diffusion, forming N ++ Zone 4 and P ++ District 1, where N ++ The junction depth of region 4 is 25μm, and the diffusion resistance R sp+ =0.4Ω / □;P ++ The junction depth of region 1 is 85μm, ...

Embodiment 3

[0063] 1 Wafer preparation

[0064] Use an N-type silicon single wafer with a thickness of 208 μm and a uniform cross-sectional resistivity of 5Ω / □ to 15Ω / □ as the N-type substrate 2, △ρn / ρn=15%, and the width of the base area of ​​the silicon wafer is 1.15 times the space charge area Width, ensure non-through structure; then silicon wafer cleaning.

[0065] 2. N + diffusion

[0066] Fabricate N on N-type substrate 2 + District 3, the N + Zone 3 junction depth 30μm, diffusion resistance R sp+ =2.4Ω / □.

[0067] 3. N ++ and P ++ diffusion

[0068] Perform N on the front and back of the N-type substrate 2 simultaneously. ++ and P ++ Diffusion, forming N ++ Zone 4 and P ++ District 1, where N ++ The junction depth of region 4 is 28μm, and the diffusion resistance R sp+ =0.5Ω / □;P ++ The junction depth of region 1 is 90μm, and the diffusion resistance R sp+ =2.5Ω / □.

[0069] 4. Platinum expansion at low temperature

[0070] After simultaneously expanding boron and ...

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Abstract

The invention provides an ultra-high-current high-frequency FRD (Fast Recovery Diode) chip and a manufacturing method thereof. The ultra-high-current high-frequency FRD chip comprises an N-type substrate with the thickness of 170 Mum-210 Mum and the sectional resistivity of 3 Omega / square-15 Omega / square, as well as an N<+> region and an N<++> region which are arranged on the front side of the N-type substrate, and a P<++> region arranged at the back of the N-type substrate, wherein the Delta Rho n / Rho n of the N-type substrate is smaller than or equal to 15 percent, and the base region width of a silicon wafer is larger than or equal to 1.1 times of the space charge region width; the junction depth of the N<++> region is 20 Mum-30 Mum, and the diffusion resistance Rsp+ is 0.3 Omega / square-0.5 Omega / square; and the junction depth of the P<++> region is 80 Mum-90 Mum, and the diffusion resistance is Rsp+ is 1 Omega / square-3 Omega / square. The manufacturing method comprises the following step: firstly, the N-type silicon wafer is adopted to ensure a non-punch through structure; secondly, the N<+> region is manufactured on the N-type substrate; thirdly, N<++> and P<++> diffusion are carried out on the front side and the back side of the N-type substrate, so as to form the N<++> region and the P<++> region; and fourthly, low-temperature platinum expansion is conducted and the residual minority carrier lifetime is 2-3Mus, and the four steps are carried out in the stressless state.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to a super-high-current high-frequency FRD diode chip and a manufacturing method thereof. This device is the core device of high-frequency resistance welding machine, and high-frequency resistance welding machine is the key equipment in large industrial fields such as automobiles, ships, airplanes, high-speed rail, and nuclear power plants. Background technique [0002] Fast recovery diodes (FRD diodes) are the most critical power semiconductor devices in large automation industries. [0003] In the last thirty years, resistance welding machines have developed greatly due to the innovative development of FRD fast recovery diodes. First at 1KH Z Frequency, FRD diodes have been successfully developed and applied. [0004] At present, the minimum silicon wafer thickness for manufacturing low-voltage fast recovery diodes is 0.24. For the production of ultra-high-current and high-freque...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 夏禹清高瑞彬夏吉夫郭永亮潘福泉
Owner JINZHOU SHENGHE POWER ELECTRONICS
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