Unlock instant, AI-driven research and patent intelligence for your innovation.

Bump-on-wire design for increased bump-to-wire distance

A technology of metal wires and metal bumps, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, sustainable manufacturing/processing, etc., and can solve problems such as solder cracking and metal wire falling off

Active Publication Date: 2017-08-22
TAIWAN SEMICON MFG CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, metal wires are more likely to detach from the dielectric layer
On the other hand, if less solder is used to reduce bridging, the stresses present in the solder zone will be applied to the small solder zone, and solder cracking will be more likely to occur than in the case of larger solder zones

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bump-on-wire design for increased bump-to-wire distance
  • Bump-on-wire design for increased bump-to-wire distance
  • Bump-on-wire design for increased bump-to-wire distance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The making and using of embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are illustrative, and do not limit the scope of the invention.

[0032] According to various exemplary embodiments, bump-on-wire (BOT) bonding structures are provided. Variations of the embodiments are discussed. Like reference numerals are used to designate like elements throughout the several drawings and throughout the illustrative embodiments.

[0033] figure 1A cross-sectional view of package assembly 20 is shown according to an exemplary embodiment. In some embodiments, package assembly 20 is a device die. According to these embodiments, semiconductor substrate 30 may be a bulk silicon substrate or a silicon-on-insulator substrate. Optionally, the semiconductor substrate 30 may also c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A package includes a first package component and a second package component. The first package assembly includes first and second metal wires at a surface of the first package assembly. The second metal wire is parallel to the first metal wire. The second metal wire includes a narrow metal wire portion having a first width and a wide metal wire portion having a second width greater than the first width, the wide metal wire portion being connected to the narrow metal wire portion. The second packaging component is located above the first packaging component. The second package assembly includes a metal bump overlapping a portion of the first metal wire, and a conductive connection joining the metal bump to the first metal wire. The conductive connection part is in contact with the top surface and the sidewall of the first metal wire. The metal bump is adjacent to the narrow metal wire portion. The invention also discloses a bump-on-wire design for increasing the distance between the bump and the wire.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and more particularly, to packages. Background technique [0002] Bump-on-wire (BOT) structures are used in flip-chip packages where metal bumps are bonded directly to narrow metal wires in the package substrate, rather than to metal pads with a diameter greater than The width of the metal wires connected to each other. The BOT structure requires a smaller chip area, and the manufacturing cost of the BOT structure is low. A conventional BOT structure can achieve the same reliability as a metal pad-based conventional bonding structure. In a typical BOT structure, solder regions are formed on the surface of the copper bumps of the device die. The solder lands bond the copper bumps to metal leads in the package substrate. The solder area is in contact with the top surface and the sidewall of the metal wire, thereby forming a BOT structure. [0003] Due to the small pitc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/488
CPCH01L2224/1308H01L2224/14133H01L23/49816H01L24/02H01L24/05H01L24/13H01L24/14H01L24/16H01L24/81H01L2224/0235H01L2224/02375H01L2224/0401H01L2224/05073H01L2224/05166H01L2224/05548H01L2224/05647H01L2224/13022H01L2224/13082H01L2224/13111H01L2224/13144H01L2224/13147H01L2224/13155H01L2224/13164H01L2224/16013H01L2224/16148H01L2224/16238H01L2224/81191H01L2224/81192H01L2224/81385H01L2224/81815H01L2224/05572H05K1/111H05K2201/09727H05K2201/10674H01L23/49827H01L23/49838H01L23/49894H01L2924/3512H01L2924/35121H01L2924/3841H01L23/3192H01L25/105H01L2225/1058H01L2225/1047H01L2224/13014Y02P70/50H01L2924/00014H01L2924/01047H01L2924/01029H01L2924/00012H01L24/33H01L24/17H01L24/09H01L2224/3003H01L29/66H01L25/0657H01L23/528H01L2224/16145H01L2224/16227H01L2225/06513
Inventor 吴胜郁郭庭豪陈承先
Owner TAIWAN SEMICON MFG CO LTD