Metal film forming method of power MOS device

A MOS device and metal film forming technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as weak bonding degree, improve electrical performance and service life, and improve bonding performance.

Inactive Publication Date: 2015-05-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if aluminum-copper is deposited as the bonding metal layer, it is easy to produce spike (puncture); if aluminum-silicon-copper is deposited as the bonding metal layer (see figure 1 ), the bonding degree of bonding will be weak

Method used

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  • Metal film forming method of power MOS device
  • Metal film forming method of power MOS device
  • Metal film forming method of power MOS device

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Embodiment Construction

[0015] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0016] Such as image 3 Shown, a kind of metal film forming method of the present invention improves power MOS (power MOS) bonding performance, mainly comprises the following steps:

[0017] (1) The formation of the first metal layer, aluminum-silicon-copper; the film-forming substrate is a silicon substrate, and the film-forming substances on the surface include but are not limited to oxide film, polysilicon, metal titanium, titanium nitride and other substances; this step mainly adopts physical Sputtering film forming process, the film forming thickness is 10-40000 Angstroms, the sputtering temperature is 10-500°C, and the pressure is 1-100mtorr.

[0018] (2) The formation of the second metal layer of aluminum copper; this step mainly adopts the physical sputtering film forming process, the film thickness is 10-40000 angstroms, the sputteri...

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Abstract

The invention discloses a metal film forming method of a power MOS device. The invention provides a novel method for bonding metal layers through deposition so as to change the conventional structure that only one metal film such as aluminum-copper or aluminum-silicon-copper metal film is deposited on surface metal; through depositing the aluminum-silicon-copper metal film and then depositing the aluminum-copper metal film, the spike is prevented, the bonding performance is improved, the electric performance of the device is improved and the service life of the device is prolonged.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, specifically relates to a semiconductor film-forming process and a metal interconnection process, in particular to a metal film-forming method for a power MOS (power MOS) device. Background technique [0002] In the traditional power MOS (power MOS) process, a single metal layer (aluminum-copper or aluminum-silicon-copper) is generally deposited as a bonding (bonding) metal layer, see figure 1 with Figure 4 . However, if aluminum-copper is deposited as the bonding metal layer, it is easy to produce spike (puncture); if aluminum-silicon-copper is deposited as the bonding metal layer (see figure 1 ), the bonding degree of bonding will be weak. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a metal film-forming method for power MOS devices, which changes the previous structure in which only aluminum-copp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
Inventor 王东李文军季芝慧
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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