led chip and its forming method
A technology of LED chips and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous brightness of LED chips, achieve the effects of improving luminous brightness, simple process, and widening the light output angle
Active Publication Date: 2017-10-31
BYD SEMICON CO LTD
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Problems solved by technology
Low luminance of LED chips
Method used
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[0030] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are intended to explain the present invention, but should not be construed as limiting the present invention.
[0031] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or positions indicated The relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the pr...
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The invention discloses an LED chip and a forming method thereof. The LED chip comprises a substrate, a first doped semiconductor layer, a first electrode, multiple quantum wells, a second doped semiconductor layer, a current diffusion layer, a second electrode, a light-exiting transition layer and a passivation layer, wherein the first doped semiconductor layer is arranged on the substrate; the first electrode is in contact with the first doped semiconductor layer; the multiple quantum wells are arranged on the first doped semiconductor layer; the second doped semiconductor layer is arranged on the multiple quantum wells; the current diffusion layer is arranged on the second doped semiconductor layer; the second electrode is arranged on the first region of the current diffusion layer; the light-exiting transition layer is arranged on the second region of the current diffusion layer; the passivation layer is arranged on the light-exiting transition layer; the refractive indexes of the current diffusion layer, the light-exiting transition layer and the passivation layer are matched. The LED chip disclosed by the invention has the advantages of large light-exiting angle and the like.
Description
Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to an LED chip and a forming method thereof. Background technique [0002] Because LED has the advantages of environmental protection, energy saving, and long life, it is widely used. figure 1 It is a schematic structural diagram of a horizontal structure LED chip in the prior art, including a substrate 100', a first doped semiconductor layer 200', a quantum well 400', a second doped semiconductor layer 500', and a current diffusion layer stacked in sequence. 600', the first electrode 300', the second electrode 700', and the passivation layer 900' covering the top of the LED chip. Usually the current diffusion layer 600’ uses ITO material with a refractive index of 2.0; the passivation layer 900’ uses SiO 2 Material, refractive index 1.46. Due to the large difference in refractive index between the two, the light is totally reflected on the light-emitting surface, the ...
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IPC IPC(8): H01L33/00H01L33/58H01L33/02
CPCH01L33/02H01L33/44H01L33/58H01L2933/0025
Inventor 张杰彭遥
Owner BYD SEMICON CO LTD