Gas sensor and preparation method thereof
A technology of gas sensors and gas chambers, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of volume-constrained sensor applications, and achieve the effect of reducing packaging costs and device volume
Active Publication Date: 2018-02-13
PROMISENSE ELECTRONICS TECH CO LTD
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Problems solved by technology
[0008] In recent years, the rise of wearable smart devices has increasingly required the miniaturization and multi-function of sensor modules. Although NDIR infrared gas sensors have the advantages of high detection accuracy, long service life, and good stability, their relative Huge size has restricted the application of this sensor in wearable smart devices
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[0041] In order to make the purpose, technical solutions and advantages of the utility model clearer, the utility model will be described in detail below with reference to the drawings and specific embodiments.
[0042] See Figure 1~Figure 7b As shown, the present invention provides a micro-machined monolithic integrated non-dispersive infrared gas sensor 100 with small size and low packaging cost and a preparation method thereof, which specifically includes the overall structure of the infrared gas sensor 100 and the design of key structures.
[0043] See figure 1 , Figure 2a~Figure 2f As shown, the infrared gas sensor 100 bonds the infrared light source 104, the gas chamber 105, and the filter through a first silicon-based wafer 101, a double-polished second silicon-based wafer 102, and a third silicon-based wafer 103. The light mirror 106 and the infrared detector 107 are integrated on one chip, which greatly reduces the packaging cost and device volume, and has application pro...
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Abstract
The invention provides an infrared gas sensor comprising a first silicon-based wafer, the first silicon-based wafer is provided with an infrared light source and an infrared detector located on the same side at intervals; it is bonded to the first silicon-based wafer A double-thrown second silicon-based wafer, the second silicon-based wafer has a filter, a first gas channel and a second gas channel corresponding to the infrared light source and the infrared detector, respectively, The optical filter is located at or inside the opening of the second gas channel; a third silicon-based wafer bonded to the side of the second silicon-based wafer away from the first silicon-based wafer, the first silicon-based wafer The side of the silicon-based wafer facing the second silicon-based wafer is provided with a gas chamber, and the gas chamber has two ends respectively corresponding to the two gas channels, and two ports communicating with the outside world. a gas vent. The infrared gas sensor has small volume and low packaging cost.
Description
Technical field [0001] The invention relates to a gas sensor, in particular to a non-dispersive infrared (NDIR) gas sensor and a preparation method thereof. Background technique [0002] As a fast and accurate gas analysis technology, non-dispersive infrared (NDIR) gas sensors are very common in practical applications. They have many advantages such as high reliability, good selectivity, high precision, non-toxicity, little environmental interference, and long life. . [0003] The basic principle of the NDIR gas sensor is that when infrared light passes through the gas to be measured, the gas molecules absorb infrared light of a specific wavelength, and the absorption relationship obeys the Lambert-Beer absorption law, that is, the light intensity varies with the gas concentration and light in the gas medium. The process attenuates exponentially, and the absorption coefficient depends on the gas characteristics. The commonly used calculation formula is: [0004] (1) [0005] Among...
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IPC IPC(8): G01N21/3504
Inventor 罗雯雯
Owner PROMISENSE ELECTRONICS TECH CO LTD