Substrate heating device and substrate heating method

Abstract

The invention relates to a substrate heating device and a substrate heating method. The device comprises a heating layer used for conducting heat, a transmission tube used for transmitting gas to a diffusion layer, the diffusion layer arranged on the heating layer and used for enabling the gas to be uniformly distributed between a lead-out layer and the heating layer, and the lead-out layer arranged on the diffusion layer and internally and uniformly provided with a plurality of through holes, wherein the through holes are used for leading out the gas in the diffusion layer to a lower side of a to-be-heated substrate, thereby enabling the to-be-heated substrate to be uniformly heated. Through the technical scheme of the invention, the to-be-heated substrate can be uniformly and comprehensively heated, so that the temperature of an upper surface of the to-be-heated substrate is more uniform and processes such as etching, depositing and / or sputtering performed on the to-be-heated substrate are enabled to achieve better effects.

Description

technical field [0001] The present invention relates to the field of display technology, in particular, to a substrate heating device and a substrate heating method. Background technique [0002] The current preparation of low-temperature polysilicon thin film transistor array substrates is developing towards high resolution and high performance. Existing heating techniques such as figure 1 As shown, the temperature of the substrate is directly provided by the heating plate. Due to the uneven density of the heating plate itself or the presence of impurities, the uneven heating of the substrate will lead to uneven temperature distribution of the substrate, which will lead to poor uniformity of film thickness distribution on the substrate. , the thickness distribution is as figure 2 As shown, the uniformity of the film thickness on the surface can only reach 4.5%, which will affect the uniformity of the film deposition, sputtering and etching processes of the substrate. C...

AI Technical Summary

Problems solved by technology

Existing heating techniques such as figure 1 As shown, the temperature of the substrate is directly provided by the heating plate. Due to the uneven density of the heating plate itself or the presence of impurities, the uneven heating of the substrate will lead to uneven temperature distribution of the substrate, which will lead to poor uniformity of film thickness distribution on the substrate. , the thickness distribution is as figure 2 As shown, the uniformity of film thickness on the surface can only reach 4.5%, which will affect the uniformity of substrate film deposition, sputtering and etching processes

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