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Substrate heating device and substrate heating method

A heating device and heating method technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problem of uneven temperature distribution of substrates, uneven density of heating plates, and poor uniformity of film-forming thickness distribution, etc. question

Active Publication Date: 2018-03-16
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing heating techniques such as figure 1 As shown, the temperature of the substrate is directly provided by the heating plate. Due to the uneven density of the heating plate itself or the presence of impurities, the uneven heating of the substrate will lead to uneven temperature distribution of the substrate, which will lead to poor uniformity of film thickness distribution on the substrate. , the thickness distribution is as figure 2 As shown, the uniformity of film thickness on the surface can only reach 4.5%, which will affect the uniformity of substrate film deposition, sputtering and etching processes

Method used

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  • Substrate heating device and substrate heating method
  • Substrate heating device and substrate heating method
  • Substrate heating device and substrate heating method

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Embodiment Construction

[0060] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0061] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0062] Such as image 3 As shown, the substrate heating device according to one embodiment of the present invention includes:

[0063] The heating layer 1 is used to conduct heat;

[0064] The tra...

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Abstract

The present invention relates to a substrate heating device and a substrate heating method. The device comprises: a heating layer for conducting heat; a transmission tube for transmitting gas to the diffusion layer; a diffusion layer arranged on the heating layer for The gas is evenly distributed between the lead-out layer and the heating layer; the lead-out layer is arranged on the diffusion layer, and a plurality of through holes are uniformly arranged in it, and the plurality of through holes are used to lead the gas in the diffusion layer to the substrate to be heated below, so that the substrate to be heated is evenly heated. Through the technical scheme of the present invention, the substrate to be heated can be heated evenly and comprehensively, so that the temperature of the upper surface of the substrate to be heated is more uniform, so that the etching, deposition and / or sputtering processes of the substrate to be heated can obtain better effects .

Description

technical field [0001] The present invention relates to the field of display technology, in particular, to a substrate heating device and a substrate heating method. Background technique [0002] The current preparation of low-temperature polysilicon thin film transistor array substrates is developing towards high resolution and high performance. Existing heating techniques such as figure 1 As shown, the temperature of the substrate is directly provided by the heating plate. Due to the uneven density of the heating plate itself or the presence of impurities, the uneven heating of the substrate will lead to uneven temperature distribution of the substrate, which will lead to poor uniformity of film thickness distribution on the substrate. , the thickness distribution is as figure 2 As shown, the uniformity of the film thickness on the surface can only reach 4.5%, which will affect the uniformity of the film deposition, sputtering and etching processes of the substrate. C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/02
CPCH01L21/67011H01L21/77H01L21/67103H01L21/67109H01L21/68742H01L21/00H01L21/324H01L21/67248H01L22/26
Inventor 陆小勇许晓伟左岳平田宏伟张宇龙春平
Owner BOE TECH GRP CO LTD
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