A method of manufacturing a light emitting diode

Abstract

The invention provides a method for manufacturing a light-emitting diode, comprising the steps of: 1) making a light-emitting epitaxial structure on the surface of a sapphire substrate; 2) forming a front scribe line on the sapphire substrate; 3) completing a chip preparation process; 4) grinding and thinning; 5) According to the front scribe, a V-shaped groove is formed on the back of the sapphire substrate; 6) Cleaning; 7) A reflective layer structure is made on the back of the sapphire substrate and the surface of the V-shaped groove; 8) To The luminescent epitaxial structure is split. The alternately stacked SiO2 layer and Ti3O5 layer of the present invention have good reflection effect; the use of ultra-thin intermediate Ni layer does not reduce the reflectivity but greatly improves the bonding performance of the Ag reflection layer and the dielectric stack, avoiding the Ag reflection layer. Alternately stacked Ni layer and Ag layer are deposited in the V-shaped groove, and the split will generate a certain extension to cover the sidewall of the Ag reflective layer, which can very well protect the sidewall of the Ag reflective layer from being oxidized. Ensure the stability and reflectivity of the reflective layer structure.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] With the rapid development of science and technology, people have more and more choices for lighting devices in life. From traditional tungsten filament bulbs to fluorescent lamps, lighting devices are constantly being introduced. In recent years, light-emitting diodes (Light Emitting Diode, LED) have developed rapidly. Due to their advantages such as small size, high efficiency, long life, and stable photoelectric characteristics, light-emitting diodes are gradually widely used in household appliances, computer screens, mobile phones, lighting equipment, Fields such as medical equipment or traffic signals. [0003] The luminous efficiency of LED is limited by the external quantum efficiency, and the external quantum efficiency is determined by the internal quantum efficiency and light extracti...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a light-emitting diode, which is used to solve the problems that the Ag reflective layer is easy to fall off and easily oxidized in the reflective structure of the light-emitting diode in the prior art.

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