Three-dimensional packaging chip silicon through hole testing device

Abstract

The invention provides a three-dimensional packaging chip silicon through hole testing device. A probe card and a chip carrying table are connected to a first testing signal line and a second testing signal line on the probe card and the chip carrying table respectively to form a testing loop, a testing signal of a testing part can be transmitted to the lower surface of wafer silicon through holes to be tested on the chip carrying table through the probe card, the first testing signal line and the second testing signal line, a probe of the probe card can gradually test the upper surfaces of silicon through holes of a wafer to be tested, accordingly the quality of the three-dimensional packaging chip silicon through holes can be accurately inspected, and the disqualification cause of the silicon through holes is further found according to an obtained result for manufacturing process optimization.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing and testing, in particular to a testing device for through-silicon vias in three-dimensional packaging chips. Background technique [0002] Three-dimensional packaged chips (3D chips) have gradually attracted people's attention and research due to their advantages of higher density, higher transmission rate and low power consumption, and Through Silicon Via (TSV) technology can make chips in three-dimensional The density of stacking in the direction is the highest, so that the interconnection lines between chips are the shortest and the external dimensions are the smallest, which can effectively realize the stacking of such 3D chips, and produce 3D chips with more complex structures, stronger performance, and more cost-effective. In the preparation process of three-dimensional packaging chips, there are currently four different TSV interconnection manufacturing technologies: wet etching ...

AI Technical Summary

Problems solved by technology

[0004] Different methods have their own different characteristics. Due to the limitation of the manufacturing process level, some failed TSVs will appear after the completion of the fabrication. These failed TSVs will lead to the failure of the interconnected modules or even the failure of the entire 3D chip.

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