Magnetic and current sensors

Abstract

The invention provides a magnetic sensor and a current sensor. The magnetic sensor comprises a semiconductor substrate, a first magneto sensor, a second magneto sensor, a third magneto sensor and a fourth magneto sensor, wherein the first magneto sensor, the second magneto sensor, the third magneto sensor and the fourth magneto sensor are arranged on the surface of the semiconductor substrate, a pair of bias electrodes and a pair of sampling electrodes are arranged on each magneto sensor, the bias electrodes are used for leading in bias currents on the magneto sensors, the sampling electrodes are used for sampling a Hall voltage generated through combined action of the bias currents and an environmental magnetic field, and the directions of the bias currents on the four magneto sensors are sequentially perpendicular to each other. The magnetic sensor and the current sensor have the advantages that due to the arrangement of the multiple magneto sensors and the currents of the magneto sensors are perpendicular to each other, and deviation caused when diffusion angles of the magneto sensors are not consistent and thicknesses are not consistent can be reduced.

Description

Technical field [0001] The invention relates to the field of integrated circuit design and packaging, in particular to a magnetic sensor and a current sensor. Background technique [0002] The basic principle of the current sensor is to use the electromagnetic induction phenomenon to use a Hall sensor to detect the current through the wire. In the prior art, a Hall sensor is usually used to detect the magnetic field strength. [0003] Attached figure 1 Shown is a schematic diagram of the basic principle of the Hall sensor detecting the magnetic field in the prior art. The four corners of the magnetic sensor 10 are respectively provided with electrodes 101 to 104, and the direction of the magnetic field B is perpendicular to the drawing. At this time, a voltage V is applied to the electrode 101 and the electrode 103 of the magnetic sensor 10 s , Under the action of the Hall effect, the carrier will generate a potential difference V between the electrode 102 and the electrode 104 h...

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, the diffusion thickness of the magnetic sensor 10 at various angles during the diffusion doping process is inconsistent, that is, the non-uniform offset voltage that exists in itself, which will not change due to the change of the direction of the driving current

Therefore, the above-mentioned dynamic offset technology still cannot solve the deviation caused by the inconsistent diffusion thickness of the magnetic sensor 10 itself, and cannot be applied to current sensor products with high precision and high linearity requirements

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