ESD protection structure, gate control power device including the structure and manufacturing method
A technology of ESD protection and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., to achieve the effect of small leakage performance and compatibility of manufacturing processes
Active Publication Date: 2017-12-29
BEIJING ZHONGKE XINWEITE SCI & TECH DEV
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005]
The present invention aims to solve the problems described above
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
[0036] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an ESD protection structure, a gate control power device including the structure and a manufacturing method. The ESD protection structure includes: a first conductivity type epitaxial layer; a first well region with a second conductivity type and a second well region with a second conductivity type located in the first conductivity type epitaxial layer; located in the epitaxial layer, on the second A well region of the first conductivity type between a well region of the second conductivity type and a second well region of the second conductivity type; a threshold injection region of the first conductivity type located in the well region of the first conductivity type; A first conductivity type drain implantation region in a second conductivity type well region; a first conductivity type source injection region located in a second second conductivity type well region; and a first conductivity type source injection region located in the first conductivity type A gate oxide layer on top of the epitaxial layer. The structure has bidirectional ESD protection capability and has small leakage performance.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to an ESD protection structure, a gate control power device including the structure and a manufacturing method thereof. Background technique [0002] Gate-controlled power devices are an important branch of power semiconductor devices, including metal oxide semiconductor field effect transistors (referred to as MOSFETs), insulated gate bipolar transistors (referred to as IGBTs), laterally diffused metal oxide semiconductor field effect transistors (referred to as LDMOS), etc. . Because this type of device has the characteristics of high input impedance and simple driving, it has been widely used. However, with the development of device design theory and the improvement of semiconductor manufacturing technology, the size of a single device is getting smaller and smaller, and the device failure caused by electrostatic discharge is becoming more and more significant. Usually the failure...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60H01L29/06H01L21/336
Inventor 孙博韬王立新张彦飞
Owner BEIJING ZHONGKE XINWEITE SCI & TECH DEV