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An electrostatic protection structure

An electrostatic protection and electrostatic technology, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as inapplicability of power devices, and achieve the effect of small leakage current and strong process stability

Active Publication Date: 2019-06-04
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing GGNMOS, SCR and other structures only have one-way blocking ability, which is not applicable
[0004] That is to say, the ESD protection structure in the prior art has the technical problem that it only has one-way blocking capability and is not suitable for power devices.

Method used

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Examples

Experimental program
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Effect test

no. 1 example

[0053] use figure 1 In the electrostatic protection structure shown, the electrostatic protection structure is arranged between the gate electrode and the source electrode to be protected, forming a five-layer four-junction structure of N-P-N-P-N. Assuming that when the ESD effect occurs, the potential of the gate G is higher than that of the source S, and the drain D, that is, the bottom end of the epitaxial layer, is suspended. At this time, the first PN junction and the third PN junction are reverse-biased, and the reverse bias voltage is mainly determined by the third PN junction assumed by the figure 1 The PN junction formed by the right P well and the N-type epitaxial layer is assumed. As the voltage between the G pole and the S pole increases, the space charge region of the PN junction will expand to the left, and finally penetrate the left P well. A quasi-N-P-N three-layer structure is formed between G-S. At this time, only the PN junction formed by the left P well ...

no. 2 example

[0056] use figure 2 In the electrostatic protection structure shown, the electrostatic protection structure is arranged between the gate electrode and the source electrode to be protected, forming a five-layer four-junction structure of N-P-N-P-N. Assuming that when the ESD effect occurs, the potential of the gate G is higher than that of the source S, and the drain D, that is, the bottom end of the epitaxial layer, is suspended. At this time, the first PN junction and the third PN junction are reverse-biased, and the reverse bias voltage is mainly determined by the third PN junction assumed by the figure 2 The PN junction formed by the rightmost P well and the N-type epitaxial layer is assumed. As the voltage between the G pole and the S pole increases, the space charge region of the PN junction will expand to the left, and successively connect with the two electrostatic protection strengthening structures 5 in the middle, that is, penetrate with the two P wells, and final...

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PUM

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Abstract

The invention discloses an electrostatic discharge protection structure which is arranged between the two poles of a device needing electrostatic discharge protection. The electrostatic discharge protection structure comprises an epitaxial layer and two first well regions on the surface of the epitaxial layer. A second well region is arranged in each of the two first well regions, and there are two second well regions in total. The two second well regions respectively contact the two poles. An isolation oxide layer is arranged between the two poles in order to protect the surface of the electrostatic discharge protection structure while isolating the two poles. The epitaxial layer and the two second well regions are of a first doping type. The first well regions are of a second doping type. The structure is provided in order to solve the technical problem that the ESD protection structure in the prior art only has the ability of one-way blocking and is not applicable to power devices. An ESD protection structure which has the ability of two-way ESD protection and is compatible with most of power device manufacturing processes is provided.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an electrostatic protection structure. Background technique [0002] Power devices are an important branch of semiconductor devices, which refer to electronic components for energy control and conversion in power electronic systems, including metal oxide semiconductor field-effect transistors (Metal Oxide Semiconductor Field-Effect Transistor, MOSFET), insulated gate bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT), turn-off thyristor (Gate Turn-Off Thyristor, GTO), etc. With the development of device design theory and the improvement of semiconductor manufacturing process level, the size of a single device is getting smaller and smaller, and the failure of power devices caused by electrostatic discharge (Electro-Static Discharge, ESD) is becoming more and more significant. Generally, ESD failure means that the electrostatic charge acts on a sensitive position of a cert...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60
Inventor 孙博韬王立新张彦飞
Owner 北京中科微投资管理有限责任公司