A large-size neodymium-doped yttrium aluminum garnet crystal growth method at the flat interface of an induction furnace

Abstract

The invention discloses a growth method of induction furnace planar-interface large-sized neodymium-doped yttrium aluminium garnet crystal, comprising the following steps: burdening, equipment wiping and equipment detection before furnace charging, loading, melting, seed crystal preheating and seeding, shouldering, turning, equal-diameter growth and ending. In the growth method, the shouldering process is followed by the turning process. During the second stage of the turning process, crystal sinks 5 mm, and this part is molten once again to produce a planar interface; then, crystal grows continuously on the planar interface. The equal-diameter growth stage is a stage of planar-interface growth, crystal has no core, and the whole equal-diameter plane of crystal can be used. Due to growth by a planar-interface mode, in comparison with an original convex-interface growth mode, high crystal revolving speed is adopted during the crystal growth process, crystal growth interface layer is thin, the crystal has good homogeneity, little scattering and low stress, and crystal quality is relatively raised. And then, crystal growth cycle is greatly shortened and is shortened by 35-40% in comparison with the crystal growth cycle by the convex-interface growth mode in the prior art.

Description

technical field [0001] The invention relates to the field of laser crystal crystallization technology, in particular to a method for growing large-sized neodymium-doped yttrium aluminum garnet crystals at the interface of an induction furnace Background technique [0002] Neodymium-doped yttrium aluminum garnet (Nd:YAG) is the most popular solid-state laser material in recent years, with excellent qualities such as high optical quality, high gain, low threshold, high mechanical hardness, and low photoelastic constant. The Nd:YAG laser technology that uses it as a working substance has developed rapidly. At room temperature, it has achieved a single output power of the order of kilowatts and a repetition rate of thousands of times per second. Processing and other industries are widely used. [0003] In recent years, developed countries such as the United States, Western Europe and Japan have invested a lot of manpower and financial resources to study how to improve the effic...

AI Technical Summary

Problems solved by technology

There are two technical breakthroughs to achieve this goal. One is to use a large-sized crucible to produce crystals with a diameter greater than 100mm, but this method has a large capital occupation rate and high energy consumption; the other is to use the flat interface method to grow crystals to overcome the existence of crystal nuclei. Lead to a certain amount of waste in later cutting

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