Thyristor electrostatic protection device and its forming method

Abstract

A thyristor electrostatic protection device and its forming method, the thyristor electrostatic protection device, comprising: a semiconductor substrate, the semiconductor substrate has a P-type well region and an N-type well region adjacent to the P-type well region Well region; the first P-type doped region located in the P-type well region; the first N-type doped region in the P-type well region between the first P-type doped region and the N-type well region; located in the N-type The second N-type doped region in the well region; the second P-type doped region in the N-type well region between the second N-type doped region and the P-type well region; the first N-type doped region and the P-type well region Between the second P-type doped region and across the first doped region and the second doped region of the P-type well region and the N-type well region, the doped impurities of the first doped region and the second doped region The types of ions are the same, and the concentration of impurity ions in the first doped region is greater than that in the second doped region. The trigger voltage of the electrostatic protection device of the present invention is reduced, and the maintenance voltage is increased.

Description

technical field [0001] The invention relates to the design field of integrated circuit electrostatic protection circuits, in particular to a thyristor electrostatic protection device and a forming method thereof. Background technique [0002] In the production and application of integrated circuit chips, with the continuous improvement of VLSI process technology, the current CMOS integrated circuit production technology has entered the deep submicron stage, the size of MOS devices is continuously shrinking, and the thickness of the gate oxide layer is increasing. The thinner the MOS device is, the lower the withstand voltage capability of the MOS device is, and the harm of electrostatic discharge (ESD) to integrated circuits becomes more and more significant. Therefore, it becomes particularly important to protect integrated circuits from ESD. [0003] In order to strengthen the ability to protect against static electricity, most of the chip's input and output interface (I / ...

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Problems solved by technology

[0011] However, the performance of the existing thyristor electrostatic protection devices still needs to be improved

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