Single Photon Avalanche Diode Imaging Sensor for Complementary Metal Oxide Semiconductor Stacked Die Applications
An imaging sensor and semiconductor technology, applied in the field of imaging systems, can solve difficult problems such as relatively small-pitch photon timing sensors
Active Publication Date: 2017-10-31
OMNIVISION TECH INC
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In addition, it is also difficult to realize relatively fine-pitch photonic timing sensors with high fill factor and superior SPAD performance in any single CMOS process
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[0014] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the specific details need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail to avoid obscuring the present invention.
[0015] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example includes In at least one embodiment of the invention. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, particular features, structures or characteristics ma...
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The present application relates to a single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications. An imaging sensor system includes a single photon avalanche diode SPAD imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially the entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near the front side is configured to pass through the backside and through the fully depleted first semiconductor layer. The substantially entire thickness of a semiconductor layer is illuminated with photons. Deep n-type isolation regions are disposed between the pixels in the first semiconductor layer to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and is coupled to count output pulses generated by a respective one of the pixels.
Description
technical field [0001] The present invention relates generally to photodetectors, and more specifically, the present invention is directed to imaging systems that include single photon avalanche diode imaging sensors. Background technique [0002] Image sensors have become ubiquitous. It is widely used in digital still cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. The technology used to manufacture image sensors has continued to advance rapidly. For example, demands for higher resolution and lower power consumption have driven further miniaturization and integration of these image sensors. [0003] One type of photodetector that can be used in an image sensor or in a photodetector is a single photon avalanche diode (SPAD). SPADs (also known as Geiger-mode avalanche photodiodes (GM-APDs)) are solid-state photodetectors capable of detecting low-intensity signals, eg, down to a single photon. A SPAD imaging sensor is a...
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IPC IPC(8): H01L27/146H04N5/374H04N5/3745
CPCH01L27/14609H01L27/14634H01L27/1463H01L27/14636H01L31/107H01L31/02027
Inventor 埃里克·A·G·韦伯斯特
Owner OMNIVISION TECH INC