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Preparation method of laser 9.3 microns in wavelength

A wavelength and laser technology, applied in the direction of lasers, laser components, phonon exciters, etc., can solve the problems of low reflectivity, high cost of cavity mirrors, very high coating technology and process requirements, etc.

Inactive Publication Date: 2015-07-15
HANS LASER TECH IND GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, the reflection film layer of the cavity mirror has a sufficiently low reflectivity for 10.2μm, 10.6μm, and 9.6μm wavelengths, and the reflectivity for the 9.3μm wavelength is greater than 99.9%. Coating technology and process requirements are very high, and the cost of cavity mirror is very high

Method used

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  • Preparation method of laser 9.3 microns in wavelength
  • Preparation method of laser 9.3 microns in wavelength
  • Preparation method of laser 9.3 microns in wavelength

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Embodiment Construction

[0022] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0023] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of ill...

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Abstract

The invention relates to a preparation method of laser 9.3 microns in wavelength. The preparation method comprises the following steps: filling mixed gas of 12C18O2, N2 and He in a discharge tube of a carbon dioxide laser, adjusting the gas pressure in the discharge tube and satisfying the condition that P(12C18O2): P(N2): P(H2): P(He) is greater than 1: 1: 6 but less than 1: 1: 9; filling auxiliary gas Xe, wherein the gas pressure satisfies the condition that P(Xe): (P(12C18O2)+P(N2)+P(He)) is greater than 3% but less than 10%; injecting radio-frequency power, wherein gas between two battens discharge; and exciting to generate laser 9.3 microns in wavelength, and outputting the laser from a window of the sealed discharge tube. According to the preparation method of the laser 9.3 microns in wavelength, the cost of preparing the laser 9.3 microns in wavelength is lowered, and the production efficiency of the preparation method of the laser 9.3 microns in wavelength is relatively high by reasonably controlling the gas pressure in the discharge tube.

Description

technical field [0001] The invention relates to a preparation method of laser, in particular to a preparation method of 9.3 μm wavelength laser. Background technique [0002] A carbon dioxide laser is a gas laser that uses carbon dioxide gas as a working substance. Enclosed radio frequency excitation diffusion cooling slab waveguide CO 2 Laser is a common commercial laser, its power ranges from several watts to thousands of watts, and has many advantages such as compact structure, small size, easy modulation of working frequency, and maintenance-free, and has been widely used in laser processing. The discharge electrode is composed of two metal slats placed in parallel. The distance between the two slats is generally a few millimeters. One side of the slat is connected to the RF power supply, and one side of the slat is grounded and the discharge occurs between the two slats. The slats and the laser cavity mirror are fixedly installed in the sealed metal casing, and the la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/036H01S3/223
Inventor 张鹏任宁林守利徐锦忠朱伟林李志高云峰
Owner HANS LASER TECH IND GRP CO LTD
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