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Thermistor, manufacturing method thereof, and film-type thermistor sensor

A technology for thermistors and manufacturing methods, applied to thermistors, resistors, thin film resistors, etc., can solve the problems of no heat resistance, uncertain reliability of nitride-based materials, and inability to ensure heat resistance, etc. , to achieve the effect of high heat resistance

Inactive Publication Date: 2017-08-22
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of Ta-Al-N-based materials, but there is no description about heat resistance, and the reliability of nitride-based materials unclear
[0012] In addition, the Cr-N-M-based material of Patent Document 4 is a material with a small B constant of 500 or less, and if heat treatment is not performed at 200°C to 1000°C, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

Method used

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  • Thermistor, manufacturing method thereof, and film-type thermistor sensor
  • Thermistor, manufacturing method thereof, and film-type thermistor sensor
  • Thermistor, manufacturing method thereof, and film-type thermistor sensor

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Embodiment

[0078] Next, regarding the metal nitride material for thermistors and its manufacturing method and thin-film thermistor sensor according to the present invention, refer to Figure 4 to Figure 13 , and specifically describe the results of evaluation based on the examples prepared according to the above-mentioned embodiment.

[0079]

[0080] As examples and comparative examples of the present invention, the following Figure 4 Element 121 is shown for film evaluation.

[0081] First, by reactive sputtering, Cr-Al alloy targets with various composition ratios were used to form Si substrates S with thermally oxidized Si wafers with a thickness of 500 nm, as shown in Table 1 and Table 2. Thin film thermistor part 3 of metal nitride material for thermistor formed in various composition ratios. The sputtering condition at this time is the ultimate vacuum degree: 5×10 -6 Pa, sputtering pressure: 0.1~1Pa, target input power (output power): 100~500W, and in the mixed gas atmospher...

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Abstract

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr x Al y (N 1-w O w ) z (where 0.70 ‰¤ y / (x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤ 0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of metal oxides as described above, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<y≤...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04C23C14/08
CPCH01C7/008C23C14/0036C23C14/0042C23C14/0641C23C14/081C30B25/06C30B29/38C30B29/605G01K7/22H01C7/006H01C7/04H01C7/041
Inventor 藤田利晃田中宽长友宪昭
Owner MITSUBISHI MATERIALS CORP
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