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Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

A technology of thermistor and manufacturing method, which is applied in the thermistor, metal material coating process, resistor, etc., can solve the problems of lack of heat resistance and unclear reliability of nitride-based materials, and achieve high resistance thermal effect

Active Publication Date: 2017-03-08
MITSUBISHI MATERIALS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of Ta-Al-N-based materials, but there is no description about heat resistance, and the reliability of nitride-based materials unclear

Method used

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  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

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Embodiment

[0047] Next, regarding the metal nitride material for thermistors and its manufacturing method and thin-film thermistor sensor according to the present invention, refer to Figures 4 to 13 , and specifically describe the results of evaluation based on the examples prepared according to the above-mentioned embodiment.

[0048]

[0049] As examples and comparative examples of the present invention, the following Figure 4 Element 21 is shown for film evaluation. First, by reactive sputtering, Ti-Al alloy targets with various composition ratios were used to form Si wafers with thermally oxidized films to form Si substrates S, as shown in Table 1 and Table 2, with a thickness of 500 nm. Thin film thermistor part 3 of metal nitride material for thermistor formed in various composition ratios. The sputtering condition at this time is the ultimate vacuum degree: 5×10 -6 Pa, sputtering pressure: 0.1~1Pa, target input power (output): 100~500W, and in the mixed gas atmosphere of Ar...

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Abstract

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti x Al y (N 1-w O w ) z (where 0.70 ‰¤ y / (x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<y≤...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04H01C7/00
CPCH01C7/008C23C14/0036C23C14/0641C30B29/38G01K7/22H01C7/04H01C7/041
Inventor 藤田利晃田中宽稻场均藤原和崇长友宪昭
Owner MITSUBISHI MATERIALS CORP
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