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Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

A technology for thermistors and manufacturing methods, applied in thermistors, coated resistance materials, resistors, etc., can solve the problems of unclear thermal reliability and no heat resistance of nitride-based materials, and achieve good B Constant, high heat resistance effect

Active Publication Date: 2016-11-09
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of the Ta-Al-N-based material, but there is no description about heat resistance, and the thermal stability of the nitride-based material is reliable. gender ambiguity

Method used

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  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor
  • Metal nitride material for thermistor, manufacturing method thereof, and thin film type thermistor sensor

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Embodiment

[0046] Next, regarding the metal nitride material for thermistors and its manufacturing method and thin-film thermistor sensor according to the present invention, refer to Figures 4 to 12 , and specifically describe the results of evaluation based on the examples prepared according to the above-mentioned embodiment.

[0047]

[0048] As examples and comparative examples of the present invention, the following Figure 4Element 21 is shown for film evaluation. First, Ti-Al alloy targets with various composition ratios were used to form Si wafers with thermally oxidized films serving as Si substrates S with various compositions shown in Table 1 with a thickness of 500 nm by the reactive sputtering method. The thin film thermistor part 3 of the thermistor is formed using a metal nitride material. The sputtering condition at this time is the ultimate vacuum degree: 5×10 -6 Pa, sputtering pressure: 0.1 to 1Pa, target input power (output): 100 to 500W, and produced in a mixed g...

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Abstract

The present invention provides a metal nitride material for a thermistor, a manufacturing method thereof, and a film-type thermistor sensor. The metal nitride material for a thermistor can be directly formed into a film on a film or the like under non-firing conditions, and It has high heat resistance and high reliability. Metal nitride material for thermistor of the present invention, by general formula: Ti x al y N z The metal nitride composition indicated, among them, 0.70≤y / (x+y)≤0.95, 0.4≤z≤0.5, x+y+z=1, and its crystal structure is a single phase of wurtzite type in the hexagonal system .

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are usually transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, these thermistor materials require firing at 600° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 3, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and B. 0.1≤x≤0.8, 0<y≤...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04H01C7/00
CPCH01C7/008C30B25/06C30B29/38G01K7/22H01C7/023H01C7/04H01C7/043H01C17/12
Inventor 藤田利晃田中宽稻叶均藤原和崇长友宪昭
Owner MITSUBISHI MATERIALS CORP
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