Metal nitride material for thermistor and its manufacturing method and film type thermistor sensor

Abstract

The present invention provides a metal nitride material for a thermistor, a manufacturing method thereof, and a film-type thermistor sensor. The metal nitride material for a thermistor can be directly formed into a film on a film or the like under non-firing conditions, and Has high heat resistance and high reliability. The metal nitride material used for the thermistor of the present invention is composed of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z, wherein M is selected from Ti, V, Cr, At least one of Mn, Fe and Co, and A represents at least one element selected from Mn, Cu, Ni, Fe and Co and is different from the selected M, 0.0<v<1.0, 0.70≤ y / (x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, x+y+z=1, and its crystal structure is a single phase of the wurtzite type in the hexagonal system.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly deposited on a thin film or the like under non-firing conditions, a method for producing the same, and a thin-film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are generally transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 to 3). In addition, these thermistor materials require heat treatment such as firing at 550° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 4, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si a...

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Problems solved by technology

In addition, in this thermistor material, in the example of Ta-Al-N-based material, although a material with a B constant of about 500 to 3000K was obtained, there is no description about heat resistance, and the nitride-based material Unknown thermal reliability

[0013] In addition, the Cr-N-M-based material of Patent Document 5 is a material with a small B constant of 500 or less, and if heat treatment at 200°C to 1000°C is not performed, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

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