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Temperature Sensor

A technology of temperature sensor and thin film thermistor, which is used in thermometers, resistors with negative temperature coefficients, instruments, etc. Thermal properties, good B constant, flexibility, and less unevenness

Active Publication Date: 2017-03-08
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, regarding the thermistor material, in the examples of Ta-Al-N-based materials, materials with a B constant of about 500 to 3000K can be obtained, but there is no description about heat resistance, and nitride-based materials Unclear thermal reliability

Method used

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Examples

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Embodiment

[0054] Next, for the temperature sensor involved in the present invention, refer to Figure 5 to Figure 13 The result of evaluation by the Example produced based on the said embodiment is demonstrated concretely.

[0055]

[0056]For the temperature sensors of Example 1 and Example 2 for bending produced according to the above-mentioned first and second embodiments, bending tests of concave and convex bending were performed alternately 100 times each with a curvature of radius 6 mm, and observation was performed after the test. Check the thin film thermistor for cracks. In addition, regarding the presence or absence of this crack, the thin film thermistor part was observed from the insulating film side. In addition, the electrical properties changes before and after the test were also evaluated. These evaluation results are shown in Table 1.

[0057] In addition, as a comparison, Comparative Example 1 for bending of a pair of opposing electrode portions smaller than the o...

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Abstract

The present invention provides a temperature sensor that does not easily generate cracks on the TiAlN thermistor material layer when bending the film, and can be directly formed on the film without firing, and has high heat resistance and reliability. Sex is higher. The temperature sensor of the present invention is provided with: an insulating film (2); a thin film thermistor part (3) formed on the insulating film by a thermistor material of TiAlN; and a pair of pattern electrodes (4) to connect each other A pair of opposed electrode parts (4a) are formed on the insulating film in such a way that they are arranged on the thin film thermistor part, and the pair of opposed electrode parts cover the thin film thermosensitive resistors except for the area between them. The entire surface of the resistor part.

Description

technical field [0001] The present invention relates to a temperature sensor as a thin-film thermistor temperature sensor excellent in bending resistance. Background technique [0002] For high precision and high sensitivity, a high B constant is required for thermistor materials used for temperature sensors and the like. Conventionally, such thermistor materials are generally transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 and 2). In addition, in order to obtain stable thermistor characteristics, these thermistor materials need to be fired at 600°C or higher. [0003] Furthermore, in addition to the thermistor material composed of the above metal oxides, for example, in Patent Document 3, it is proposed to use the general formula: M x A y N z (wherein, M represents at least one of Ta, Nb, Cr, Ti, and Zr, and A represents at least one of Al, Si, and B. 0.1≤x≤0.8, 0<y≤0.6, 0.1≤z≤0.8 , x+y+z=1) represented by the nitride thermistor material....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/22H01C7/04
CPCG01K7/22H01C7/04H01C7/008G01K7/226
Inventor 田中宽稻场均竹岛一太长友宪昭
Owner MITSUBISHI MATERIALS CORP
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