Metal nitride material for thermistors, method for producing same, and film-type thermistor sensor

Abstract

Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula (M1-vVv)xAly(N1-wOw)z (wherein 0.0 < v < 1.0, 0.70 ≤ y / (x+y) ≤ 0.98, 0.45 ≤ z ≤ 0.55, 0 < w ≤ 0.35, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure, wherein said M is Ti and / or Cr. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen- and oxygen-containing atmosphere by using an M-V-Al alloy sputtering target, wherein said M is Ti and / or Cr.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly formed on a thin film or the like under non-firing conditions, a method for producing the same, and a thin film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are generally transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 to 3). In addition, these thermistor materials require heat treatment such as firing at 550° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 4, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and ...

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of the Ta-Al-N-based material, but there is no description about heat resistance, and the thermal stability of the nitride-based material is reliable. gender ambiguity

[0013] In addition, the Cr-N-M-based material of Patent Document 5 is a material with a small B constant of 500 or less, and if heat treatment at 200°C to 1000°C is not performed, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

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